Samsung Electronics Co., Ltd.

Mi-Hyang Lee

Jong Youl Lee

Seunghyun Han

Joon-Ho Lee

Gwang-ok Go

Kyung-Ho Shin

A nonvolatile memory device includes a first area of single-level cells (SLCs) and a second area of multi-level cells (MLCs). The device determines whether a free block can be created by copying data between memory blocks of the first area. Upon determining that the free memory block can be created by copying data between the memory blocks of the first area, the device copies the data between the memory blocks of the first area to create the free memory block. Otherwise, the device selects at least one memory block from the first area and allocates the selected memory block as free memory block by copying the data stored in the selected memory block of the first area to the second area.

Devices and methods of managing nonvolatile memory device having single-level cell and multi-level cell areas

A method of executing a write operation in a nonvolatile memory system includes receiving a write command indicating the write operation and write data associated with the write operation, and determining a selected merge size for use by a merge operation responsive to the write command by determining a number of free blocks and then determining a selected free block level (FBL) from among a plurality of FBLs in accordance with the number of free blocks.

Memory system performing incremental merge operation and data write method

Disclosed is a method of executing a write operation in a nonvolatile memory system. The method includes receiving a write command indicating the write operation and write data associated with the write operation, and determining a selected merge size for use by a merge operation responsive to the write command by determining a number of free blocks and then determining a selected free block level (FBL) from among a plurality of FBLs in accordance with the number of free blocks.

Growing community of inventors

Hwaseong-si, South Korea

Mi-Hyang Lee