Seoul Viosys Co., Ltd.

Mi Hee Lee

Chang Yeon Kim

Joon Hee Lee

Ju Yong Park

Jong Kyun You

So Ra Lee

Jun Hee Lee

Mi Na Jang

Sung Su Son

Chang Ik Im

A light emitting diode includes a light emitting structure including first and second conductive type semiconductor layers and an active layer disposed therebetween, a second hole formed through the active layer and the second conductive type semiconductor layer, and exposing the first conductive type semiconductor layer, a reflective metal layer contacting a portion of the light emitting structure, a cover metal layer contacting at least a portion of the reflective metal layer, a first insulation layer covering the reflective metal layer and the cover metal layer, an electrode layer disposed on the first insulation layer, the electrode layer covering the first insulation layer and filling the second hole, an electrode pad disposed on the light emitting structure, and a first hole formed through the first conductive type semiconductor layer and corresponding to the cover metal layer, in which the electrode pad overlaps the cover metal layer.

Light emitting diode with high luminous efficiency

A light emitting diode includes: a first conductivity type semiconductor layer; a mesa including an active layer and a second conductivity type semiconductor layer, the mesa having a groove disposed under some region of the first conductivity type semiconductor layer to expose an edge of the first conductivity type semiconductor layer, the groove exposing the first conductivity type semiconductor layer; a first electrode including a first contact portion electrically connected to the first conductivity type semiconductor layer through the groove; a second electrode disposed between the first electrode and the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer; and an upper electrode pad disposed adjacent to the first conductivity type semiconductor layer and connected to the second electrode, wherein the groove has a shape surrounding a region including a center of the mesa and partially open.

Vertical type light emitting diode having groove disposed under the first conductivity type semiconductor layer

A nitride semiconductor light emitting device may include: a semiconductor layer; an active layer; a second semiconductor layer; mesa regions formed to expose the semiconductor layer; a second electrode formed under the second semiconductor layer; a cover metal layer formed at a corner under the second semiconductor layer to overlap part of the second electrode; an insulating layer formed under the cover metal layer, the second electrode, and the mesa regions and having openings to expose the semiconductor layer; a first electrode disposed in the openings and over a conductive substrate; and a second electrode pad formed over the exposed cover metal layer, wherein when the width a of the second electrode between adjacent mesa regions and the width b of the second electrode between a mesa region at the edge and an extension line of the cover metal layer at the corner have a relation of a&#x3e;b.

Semiconductor light emitting device and method of manufacturing the same

Exemplary embodiments of the present invention provide a high efficiency light emitting diode including a semiconductor stack including a first-type compound semiconductor layer, an active layer, and a second-type compound semiconductor layer, a first electrode disposed on the semiconductor stack, and a graphene-metamaterial laminate structure disposed between the first electrode and the semiconductor stack.

Growing community of inventors

Ansan-si, South Korea

Mi Hee Lee