Samsung Electronics Co., Ltd.

Mi Gyeong Gwon

Young Hoon Song

Young Mook Oh

Sug Hyun Sung

Kyung Seok Min

Seong Jin Nam

Semiconductor devices are provided. The semiconductor device includes a first fin and a second fin on a substrate and a field insulation layer between the first fin and the second fin. The field insulation layer include a first insulation layer and a second insulation layer on the first insulation layer and connected to the first insulation layer. The second insulation layer is wider than the first insulation layer. A ratio of a top width to a bottom width of each of the first fin and the second fin exceeds 0.5.

Growing community of inventors

Seoul, South Korea

Mi Gyeong Gwon