Samsung Electronics Co., Ltd.

Lg Display Co., Ltd.

Mi-Ae Kim

Jun-Hyun Cho

Jung-Ho Lee

Jung-sik Choi

Tae-Sung Kim

Youn-Joung Cho

Kyoo-Chul Cho

Dong-jun Lee

Yo-Han Ahn

Pil-kwon Jun

Sun-Hee Park

Kun-Hyung Lee

Jae-Seok Lee

Jae-Hyun Yang

Gui-Young Cho

Hong-Hee Jeong

A light emitting display device includes a lower substrate, a driving transistor positioned on the lower substrate and including a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, and a light shield layer covering a lower surface, an upper surface, and a side surface of the semiconductor layer, for protecting the driving transistor from external light.

Light emitting display device

A display device includes a first substrate and a second substrate at which a display area for displaying an image and a non-display area surrounding the display area are provided; a light-emitting diode in the display area on an inner surface of the first substrate and including an anode electrode, a light-emitting layer and a cathode electrode; and a piezoelectric element in the display area on an inner surface of the second substrate and including a first electrode, a piezoelectric layer and a second electrode, wherein the piezoelectric layer includes dichroic dyes.

Display device

In an embodiment, heat treatment equipment comprises a process tube, an exhaust duct connected to the process tube, and, during operation, exhausting gases present within the process tube. The heat treatment equipment also comprises a hollow pressure control member interposed between the process tube and the exhaust duct, the pressure control member being operatively connected to the process tube and the exhaust duct respectively, and including one or a number of openings. Negative pressure is avoided in the process tube during heat treatment processes so that unwanted gas and impurities cannot enter the process tube from outside.

Heat treatment equipment

A method of manufacturing a reference sample substrate for analyzing a metal contamination level includes coating an organic silica solution including metal impurities on a semiconductor substrate and forming an oxide layer on the semiconductor substrate by thermally treating the semiconductor substrate having the coated organic silica solution. The metal impurities are substantially uniformly distributed in the oxide layer and the metal impurities are positioned at predetermined portions of the oxide layer.

Methods of manufacturing reference sample substrates for analyzing metal contamination levels

A method of forming an insulating layer and a method of manufacturing a semiconductor device using insulating layer are disclosed. A preliminary insulating layer including a material having a relatively low dielectric constant is formed on an object. An upper portion of the preliminary insulating layer is provided with an ozone gas to transform the preliminary insulating layer into an insulating layer having an upper insulating film including an oxide and a lower insulating film including the material having the relatively low dielectric constant. The upper insulating film may further be located on the lower insulating film.

Method of manufacturing an insulating layer and method of manufacturing a semiconductor device using the insulating layer

A spin-on glass composition includes a solvent, about 3 to about 20 percent by weight of a porogen, and about 3 to about 20 percent by weight of a silsesquioxane oligomer represented by formula (1), where, in the formula (1), Yand Yindependently represent a hydrolyzable alkoxy group, R represents a lower alkyl group, and n and m independently represent an integer in a range of one to nine both inclusive.

Spin-on glass composition, method of preparing the spin-on glass composition and method of forming a porous silicon oxide layer using the spin-on glass composition

An organic aluminum precursor includes aluminum as a central metal, and borohydride and trimethylamine as ligands. In a method of forming an aluminum layer or wire, the organic aluminum presursor is introduced onto a substrate, and then thermally decomposed. The aluminum decomposed from the organic aluminum precursor is deposited on the substrate.

Organic aluminum precursor and method of forming a metal wire using the same

In a method of manufacturing a metal wiring, an organic aluminum precursor that includes aluminum as a central metal is applied to a substrate. The organic aluminum precursor applied to the substrate is thermally decomposed to form aluminum. The aluminum is deposited on the substrate to form an aluminum wiring having a low resistance. The organic aluminum precursor includes a chemical structure in accordance with one of the chemical formulae:  

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Seoul, South Korea

Mi-Ae Kim