Electronics and Telecommunications Research Institute

Meyoung Ju Joung

Seung Youl Kang

Kyung Soo Suh

Chul Am Kim

Mi Kyung Kim

Seong Deok Ahn

Yong Eui Lee

Gun Hong Lee

Seongdeok Ahn

An electrophoretic display and a method of manufacturing the electrophoretic display are provided. The electrophoretic display includes an lower electrode formed on an under layer, an lower electrode protection layer formed on the lower electrode, an insulating template formed on the lower electrode protection layer and having a plurality of holes of smaller size than the wavelength of visible rays region, a dielectric fluid filling the holes and having a color, a plurality of charged particles suspended in the dielectric fluid filling each of the plurality of holes having a color different from the color of the dielectric fluid, and an upper electrode formed on the insulating template in sequential order. Accordingly, a problem of agglomeration of the charged particles can be solved by the insulating template having holes of smaller size than the wavelength of visible rays region, and thus a reliable electrophoretic display emitting light of one color or natural colors is achieved.

Template type electrophoretic display and method of manufacturing the same

A method of fabricating a bottom gate type organic thin film transistor is provided. The method includes the acts of: forming a gate conductive layer pattern on a substrate; forming a gate insulating layer on an exposed portion of the surface of the substrate and the gate conductive layer pattern; forming source/drain electrodes on the gate insulating layer to expose a portion of the surface of the gate insulating layer above on the gate conductive layer pattern; forming an organic semiconductor thin film on the exposed portion of the gate insulating layer; forming on the organic semiconductor thin film a passivation layer pattern exposing a portion of the surface of the organic semiconductor thin film; and forming an organic semiconductor thin film pattern by etching the exposed surface of the organic semiconductor thin film using the passivation layer pattern as an etch mask.

Method of fabricating bottom gate type organic thin film transistor

Growing community of inventors

Daejeon, South Korea

Meyoung Ju Joung