Samsung Electronics Co., Ltd.

Meung-Ryul Lee

Mi-Hyun Kang

Yong-Hoan Kim

A semiconductor integrated circuit device includes a first dopant region in a semiconductor substrate, an isolation region on the semiconductor substrate, the isolation region surrounding the first dopant region, a gate wire surrounding at least a portion of the isolation region, and a plurality of second dopant regions arranged along at least a portion of the gate wire, the plurality of second dopant regions being spaced apart from each other, and the portion of the gate wire being between the first dopant region and a respective second dopant region.

Growing community of inventors

Seoul, South Korea

Meung-Ryul Lee