Tokyo Electron Limited

International Business Machines Corporation

Other

University of Houston System

Tokyo Electon Limited

Merritt Funk

Lee Chen

Jianping Zhao

Radha Sundararajan

Daniel Joseph Prager

Barton Lane

Asao Yamashita

Zhiying Chen

Chelsea Dubose

Justin Moses

Kevin Lally

Wesley Charles Natzle

Yohei Yamazawa

Peter Ventzek

Sachin Deshpande

David V Horak

Toshihisa Nozawa

Peter L G Ventzek

Kazuki Moyama

Toshihiko Iwao

Kevin Augustine Pinto

Alok Ranjan

Kazushi Kaneko

Masayuki Tomoyasu

Michael Hummel

Hyung Joo Lee

Eric J Strang

Demetre J Economou

Masaya Odagiri

Ronald Victor Bravenec

Masaki Tozawa

Akira Iwami

Iwao Toshihiko

Raymond Peterson

Megan Doppel

Lemuel Chen

Hiroyuki Takahashi

Michael Carcasi

Peter E Biolsi

James E Willis

Vincent M Donnelly

John M Kulp

Ryukichi Shimizu

Peter Lg Ventzek

Radha Sundaranajan

John Entralgo

An antenna includes an inner structure, an outer structure, and a plurality of interconnecting structures coupling the inner structure to the outer structure. The plurality of interconnecting structures is axisymmetric with respect to a center of the antenna. Each interconnecting structure has an azimuthal component of at least 30 degrees.

Apparatus for plasma processing

In one exemplary embodiment described herein are innovative plasma processing methods and system that utilize direct measurement of direct current (DC) field or self-bias voltage (Vdc) in a plasma processing chamber. In one embodiment, a non-plasma contact measurement using the electric field effect from Vdc is provided. The Vdc sensing method may be robust to a variety of process conditions. In one embodiment, the sensor is integrated with any focus ring material (for example, quartz or doped-undoped silicon). Robust extraction of the Vdc measurement signal may be used for process control. In one embodiment, the sensor may be integrated, at least in part, with the substrate being processed in the chamber.

Process control enabled VDC sensor for plasma process

A radio frequency (RF) system including: a first conductive covering surface, a portion of the first conductive covering surface including a portion of the first outer wall of a first RF device; a second conductive covering surface aligned to the first conductive covering surface, the second conductive covering surface being disposed around the insulating hole; an insulating hole for an RF center conductor extending through the first conductive covering surface and the second conductive covering surface, the first conductive covering surface and the second conductive covering surface being disposed around the insulating hole; a cavity bounded by the first conductive covering surface and the second conductive covering surface, the cavity being an insulating region; and an RF signal pickup disposed within the cavity.

Radio frequency (RF) system with embedded RF signal pickups

A radio frequency sensor assembly includes a sensor casing disposed around a central hole, the sensor casing including a first conductive cover and a second conductive cover. The assembly includes a cavity disposed around the central hole and includes a dielectric material, the cavity being bounded by a first major outer surface and a second major outer surface along a radial direction from a center of the central hole, where the first conductive cover is electrically coupled to the second conductive cover through a coupling region beyond the second major outer surface of the cavity, and electrically insulated from the second conductive cover by the cavity and the central hole. The assembly includes a current sensor electrically insulated from the sensor casing and including a current pickup disposed symmetrically around the central hole, the current pickup being disposed within the cavity and being insulated from the sensor casing.

RF voltage and current (V-I) sensors and measurement methods

An apparatus for plasma processing includes a first resonating structure and a second resonating structure. The first resonating structure is coupled to a first RF generator through a first matching circuit. The second resonating structure surrounds the first resonating structure. The second resonating structure is coupled to a second RF generator through a second matching circuit.

According to an embodiment, a radiating structure of a resonating structure used for plasma processing is disclosed. The radiating structure includes a set of first arms and a set of second arms. Each first arm has a first inductance and is coupled to a respective first capacitor and a respective second capacitor of the resonating structure to form a corresponding first resonant circuit operating at a first resonance frequency. Each second arm has a second inductance and is coupled to a respective third capacitor and a respective fourth capacitor of the resonating structure to form a corresponding second resonant circuit operating at a second resonance frequency. In a first mode of operation, the resonating structure operates as a single resonance antenna. In a second mode of operation, the resonating structure operates as a parallel resonance antenna.

Parallel resonance antenna for radial plasma control

Various embodiments of systems and methods are described herein for controlling a pulsed plasma. Pulse timing parameters (e.g., the pulse on-time and/or the pulse-off time) of the plasma generation source may be controlled based on the measurement data received from measurement device(s), to control the plasma exposure of the substrate during a sequence of dynamically controlled pulses within the plasma process chamber. In addition or alternatively, pulse timing parameters (e.g., the pulse on-time and/or the pulse-off time) can be applied to the source power, bias power, and/or both based on the measurement data received from measurement device(s), to control a plasma exposure of the substrate. The pulse timing changes may be made in a feedforward or feedback manner.

Methods for real-time pulse measurement and pulse timing adjustment to control plasma process performance

This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. In one embodiment, the plasma density may be controlled by reducing the rate of loss of ions to the chamber wall during processing. This may include biasing a dual electrode ring assembly in the plasma chamber to alter the potential difference between the chamber wall region and the bulk plasma region.

Electric pressure systems for control of plasma properties and uniformity

Embodiments are described herein for power generation systems and methods that use quadrature splitters and combiners to facilitate plasma stability and control. For one embodiment, a quadrature splitter receives an input signal and generates a first and second signals as outputs with the second signal being ninety degrees out of phase with respect to the first signal. Two amplifiers then generate a first and second amplified signals. A quadrature combiner receives the first and second amplified signals and generates a combined amplified signal that represents re-aligned versions of the first and second amplified signals. The power amplifiers can be combined into a system to generate a high power output to a processing chamber. Further, detectors can generate measurements used to monitor and control power generation. The power amplifiers, system, and methods provide significant advantages for high-power generation delivered to process chambers for plasma generation during plasma processing.

Power generation systems and methods for plasma stability and control

A radio frequency (RF) system includes a RF power source configured to power a load with an RF signal; an RF pipe including an inner conductor and an outer conductor connected to ground coupling the RF power source to the load; and a current sensor aligned to a central axis of the RF pipe carrying the RF signal. A sensor casing is disposed around the RF pipe, where the sensor casing includes a conductive material connected to the outer conductor of the RF pipe. A gallery is disposed within the sensor casing and outside the outer conductor of the RF pipe, where the current sensor is disposed in the gallery. A slit in the outer conductor of the RF pipe exposes the current sensor to a magnetic field due to the current of the RF signal in the inner conductor of the RF pipe.

In accordance with an embodiment, a measurement system includes a sensor circuit configured to provide a voltage sense signal proportional to an electric field sensed by the RF sensor and a current sense signal proportional to a magnetic field sensed by the RF sensor; an analysis circuit comprising a frequency selective demodulator circuit configured to: demodulate the voltage sense signal into a first set of analog demodulated signals according to a set of demodulation frequencies, demodulate the current sense signal into a second set of analog demodulated signals according to the set of demodulation frequencies, and determine a phase shift between the voltage sense signal and the current sense signal for at least one frequency of the set of demodulation frequencies; and analog-to-digital converters configured to receive the first and second sets of analog demodulated signals.

RF measurement system and method

Methods and systems are disclosed for focus ring thickness measurement and feedback control within process chambers. For disclosed embodiments, in-chamber sensors measure physical parameters associated with focus rings, and these measurements are used to determine thickness for the focus rings. The thickness determinations can be used to detect when a focus ring should be replaced and can also be used as feedback to adjust the position of the focus rings within the chamber. For one embodiment, measurements from ultrasonic sensors are used to make thickness determinations for focus rings. For further embodiments, these ultrasonic sensors are positioned at end portions of focus ring lift pins. Other sensors can also be used such as capacitive sensors, resistive sensors, and/or other desired sensors. Further variations and implementations can also be achieved using in-chambers sensors to facilitate focus ring thickness determinations.

Methods and systems for focus ring thickness determinations and feedback control

Embodiments are described for modules, multi-stage systems, and related methods for radio frequency (RF) power amplifiers with reduced size and weight requirements. Fluid cooling is incorporated directly into the power amplifier (PA) module design rather than requiring PA modules to be mounted on separate cooling devices. For one embodiment, a PA module includes a circuit board, RF circuit components, a ground plane, and a cooling plate having one or more cooling channels to receive a cooling fluid. The cooling channels are positioned to dissipate heat from the RF circuit components through the ground plane. For a further embodiment, the PA module also includes RF bias and power electronics within a housing for the PA module without requiring an external control board or power conversion electronics. Also disclosed are multi-stage PA systems having a plurality of PA modules that are similarly cooled using cooling channels.

Modules, multi-stage systems, and related methods for radio frequency power amplifiers

Growing community of inventors

Austin, TX, United States of America

Merritt Funk