Toshiba Memory Corporation

Merii Inaba

Shoko Kikuchi

Takashi Shigeoka

Hiroshi Inagaki

Yu Suzuki

Jun Murakami

Takashi Okuhata

A semiconductor device includes: a semiconductor substrate; a plurality of first pad electrodes provided above the semiconductor substrate; a plurality of first wires electrically connected to the plurality of first pad electrodes respectively; a first electrode commonly connected to the plurality of first wires; a second pad electrode provided above the semiconductor substrate; and a first resistance portion and a first protective element that are connected in series between the first electrode and the second pad electrode.

Semiconductor device

According to one embodiment, a semiconductor device includes a substrate and a multilayer body provided on the substrate. The multilayer body has electrode films and insulating films. The electrode films contain silicon, the insulating films contain silicon oxide. Each of the electrode films and each of the insulating films are alternately stacked. A hole is formed in the multilayer body, and the hole vertically extends in the multilayer body. The electrode films include a first electrode film and a second electrode film located below the first electrode film. Carbon concentration of the first electrode film is higher than carbon concentration of the second electrode film.

Carbon and fluorine concentration of electrodes for a semiconductor device

Growing community of inventors

Kamakura, Japan

Merii Inaba