E.i. Dupont De Nemours and Company

Dupont Electronics, Inc.

Du Pont Toray Company Limited

Meredith L Dunbar

Thomas Edward Carney

Scott John Herrmann

Jeffrey Michael Bartolin

Brian C Auman

Yueh-Ling Lee

Harry Richard Zwicker

Carl Baasun Wang

James R Edman

Shane Fang

Kostantinos Kourtakis

Kenji Uhara

Tao He

Hideki Moriyama

Rosa Irene Gonzalez

The present disclosure is directed to a base film having a chemically converted polyimide, a particulate polyimide matting agent and a low conductivity carbon black. The particulate polyimide matting agent is present in an amount from 1.6 to 9 weight percent of the base film.

Matte finish polyimide films and methods relating thereto

The present disclosure is directed to a base film having a chemically converted polyimide, a non-carbon black pigment and a particulate polyimide matting agent. The particulate polyimide matting agent is present in an amount from 1.6 to 9 weight percent of the base film.

The present disclosure is directed to a base film having a chemically converted polyimide, a particulate polyimide matting agent having a density from 1.3 to 1.5 g/cc and either a non-carbon black pigment or a dye. The particulate polyimide matting agent is present in an amount from 1.6 to 20 weight percent of the base film.

The present disclosure is directed to a base film having a chemically converted polyimide, a particulate polyimide matting agent and a low conductivity carbon black. The particulate polyimide matting agent is present in an amount from 1.6 to 20 weight percent of the base film.

The present disclosure is directed to a thin film transistor composition. The thin film transistor composition has a semiconductor material and a substrate. The substrate is composed of a polyimide and a sub-micron filler. The polyimide is derived from at least one aromatic dianhydride component selected from rigid rod dianhydride, non-rigid rod dianhydride and combinations thereof, and at least one aromatic diamine component selected from rigid rod diamine, non-rigid rod diamine and combinations thereof. The mole ratio of dianhydride to diamine is 48-52:52-48 and the ratio of X:Y is 20-80:80-20 where X is the mole percent of rigid rod dianhydride and rigid rod diamine, and Y is the mole percent of non-rigid rod dianhydride and non-rigid rod diamine. The sub-micron filler is less than 550 nanometers in at least one dimension; has an aspect ratio greater than 3:1; is less than the thickness of the film in all dimensions.

Thin film transistor compositions, and methods relating thereto

The present disclosure is directed to a base film having a thickness from 8 to 152 microns, a 60 degree gloss value from 2 to 35, an optical density greater than or equal to 2 and a dielectric strength greater than 1400 V/mil. The base film comprises a chemically converted (partially or wholly aromatic) polyimide in an amount from 71 to 96 weight percent of the base film. The base film further comprises a pigment and a matting agent. The matting agent is present in an amount from 1.6 to 10 weight percent of the base film, has a median particle size from 1.3 to 10 microns, and has a density from 2 to 4.5 g/cc. The pigment is present in an amount from 2 to 9 weight percent of the base film. The present disclosure is also directed to coverlay films comprising the base film in combination with an adhesive layer.

The present disclosure is directed to a base film having a thickness from 8 to 152 microns, a 60 degree gloss value from 2 to 35, an optical density greater than or equal to 2 and a dielectric strength greater than 1400 V/mil. The base film comprises a chemically converted (partially or wholly aromatic) polyimide in an amount from 63 to 96 weight percent of the base film. The base film further comprises a pigment and a matting agent. The matting agent is present in an amount from 1.6 to 10 weight percent of the base film, has a median particle size from 1.3 to 10 microns, and has a density from 2 to 4.5 g/cc. The pigment is present in an amount from 2 to 35 weight percent of the base film. The present disclosure is also directed to coverlay films comprising the base film in combination with an adhesive layer.

Pigmented polyimide films and methods relating thereto

The present invention relates generally to polyimide composites having dispersed in the polyimide base matrix, useful spinel crystal fillers wherein the composite has a visible-to-infrared light extinction coefficient between and including 0.05 and 0.60 microns. The composite polyimides formed therefrom are typically used to make circuits having fine electrically conductive pathways adjacent to the polyimide substrate. These fine electrically conductive pathways are typically formed on the substrate using an electro-less metal plating step. First, the surface of the polyimide composite is light activated, typically by using a laser beam, then the light activated portions are plated to form thin lines, or pathways, on the film's surface.

Light activatable polyimide compositions for receiving selective metalization, and methods and compositions related thereto

A light-activatable polymer composition and polymer composite includes a polymer binder selected from epoxy resins, silica filled epoxy, bismaleimide resins, bismaleimide triazines, fluoropolymers, polyesters, polyphenylene oxide/polyphenylene ether resins, polybutadiene/polyisoprene crosslinkable resins (and copolymers), liquid crystal polymers, polyamides, cyanate esters, or combinations thereof, the polymer binder being present in an amount from 40, 45, 50, 55, 60, 65, 70, 75, 80, 85, 90, 95, 96, or 97 weight-percent of the total weight of the polymer composition; a spinel crystal filler present in an amount from 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 20, 25, 30, 35, 40, 45, 50, 55 and 60 weight-percent of the total weight of the polymer composition, and methods for making same are provided.

Compositions useful in electronic circuitry type applications, patternable using amplified light, and methods and compositions relating thereto

The present invention relates generally to polymer composites having dispersed therein both useful spinel crystal fillers and ferroelectric (and/or paraelectric) fillers wherein the composite is both light activatable and can be used as a planar capacitor material. The light activation is typically employed via a laser beam (or other light emitting device) where the material has a pattern formed thereon. Electrodes are typically formed on the material's surface after patterning is complete via electroless metal plating. These composite polymers can be used as planar capacitors embedded in printed wiring boards or in integrated circuit packages.

Polymer-based capacitor composites capable of being light-activated and receiving direct metalization, and methods and compositions related thereto

The substrates of the present invention comprise a polyimide base polymer derived at least in part from non-rigid rod monomers together with optionally rigid rod monomers where the substrates are cured under low tension. The resulting polyimide materials have been found to provide advantageous properties (e.g. balanced molecular orientation, good dimensional stability, and flatness) particularly useful for electronics type applications.

Polyimide substrates having enhanced flatness, isotropy and thermal dimensional stability, and methods and compositions relating thereto

A laminate having improved resistance to separation failure when incorporated into a flexible circuit structure. The laminate comprising a highly bondable polyimide and is preferably formed from a polyamic acid comprising a tetracarboxylic acid component, a diamine component, and 0.1 to 5.0 mole % of a dicarboxylic acid component, with respect to the tetracarboxylic acid component, and wherein the adhesive strength of the laminate is greater than 10  N/cm, and more preferably greater than 19 N/cm.

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Canal Winchester, OH, United States of America

Meredith L Dunbar