Applied Materials, Inc.

Meredith J Williams

Paul L Deaton

James V Tietz

David S Ballance

Benjamin B Bierman

Brian L Haas

Nobuyuki Takahashi

An apparatus to isolate a rotating frame in a processing chamber, comprising: a support cylinder rotatably extending from the rotating frame; and a co-rotating edge ring extension extending from the support cylinder to at least one of substantially thermally, optically and mechanically isolate the region above the co-rotating edge ring extension from the region below the co-rotating edge ring extension.

Co-rotating edge ring extension for use in a semiconductor processing

A method for controlling the temperature of a substrate in a processing chamber. The processing chamber employs a heating control over at least two heating zones. Each heating zone is independently controllable according to a measured signal corresponding to the substrate temperature and a user-definable offset.

Method and apparatus for achieving temperature uniformity of a substrate

A substrate support, for example an edge ring, includes an upper ledge for supporting a first substrate, such as a semiconductor wafer, during a first process, and a lower ledge contiguous with the upper ledge for supporting a second substrate during a second process for cleaning the substrate support. A method of processing substrates supported by the edge ring in a thermal process chamber is also disclosed.

Multi-ledge substrate support for a thermal processing chamber

In one embodiment, the invention is directed to an apparatus for preventing depositions from occurring on a reflector in a processing chamber, comprising: a cover disposed adjacent to the reflector, the cover optically transparent over a range of wavelengths in which the reflector is reflective; and at least one cover support for maintaining the position of the cover relative to the reflector.

Reflector cover for a semiconductor processing chamber

An apparatus for purging the backside of a substrate in a process chamber includes a purge gas injector. The injector includes a substantially annular-shaped opening providing a slit that is structured and arranged to direct a flow of purge gas about radially outward therefrom in a direction approximately parallel to a plane defined by the substrate, wherein the substrate is supported in the process chamber above the purge gas injector. When the substrate is rotated at a sufficient speed, the purge gas flowing from the injector is impelled to flow spirally outward along the backside of the substrate.

Growing community of inventors

Santa Clara, CA, United States of America

Meredith J Williams