Other

Meoung-Whan Cho

Takafumi Yao

A p-type contact electrode device in a ZnSe-based II-VI compound semiconductor, which electrode device uses, as a contact layer, a BeTe layer having a high p-type doping and a low lattice mismatching with a GaAs substrate to prevent oxidation in air. The device includes a contact layer composed of p-BeTe and a cap layer is composed of p-ZnSe. The cap layer is positioned on the contact layer and an electrode sits atop the cap layer. Preferably, the thickness of the cap layer is 30 to 70 &angst; and the electrode is composed of gold or gold is dispersed in the cap layer.

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Sendai, Japan

Meoung-Whan Cho