Applied Materials, Inc.

Mengxue Wu

Siew Kit Hoi

Jay Min Soh

Jiao Song

Yue Cui

Palaniappan Chidambaram

Kirankumar Neelasandra Savandaiah

David Gunther

Nuno Yen-Chu Chen

Madan Kumar Shimoga Mylarappa

Chul Nyoung Lee

Sputter target for a physical vapor deposition chamber

Target profile for a physical vapor deposition chamber target

Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises applying a DC target voltage to a target disposed within a processing volume of a plasma processing chamber, rotating a magnet disposed above the target at a default speed to direct sputter material from the target toward a substrate support disposed within the processing volume, measuring in-situ DC voltage in the processing volume, the in-situ DC voltage different from the DC target voltage, determining if a measured in-situ DC voltage is greater than a preset value, if the measured in-situ DC voltage is less than or equal to the preset value, maintaining the magnet at the default speed, and if the measured in-situ DC voltage is greater than the preset value, rotating the magnet at a speed less than the default speed to decrease the in-situ DC voltage.

Methods and apparatus for processing a substrate

Methods and apparatus for processing substrates are provided herein. For example, a magnet to target spacing system configured for use with an apparatus for processing a substrate comprises a sensor configured to provide a signal corresponding to a distance between a front of a magnet and a back of a target while rotating the magnet with respect to the target and a magnet controller configured to control the distance between the front of the magnet and the back of the target based upon the signal provided by the sensor.

Growing community of inventors

Singapore, Singapore

Mengxue Wu