Alliance for Sustainable Energy, LLC

Brown University

Shanghai Jiao Tong University

Mengjin Yang

Kai Zhu

Marinus Franciscus Antonius Maria Van Hest

Nitin Prabhakar Padture

Yuanyuan Zhou

Yixin Zhao

Taiyang Zhang

Jeffrey Lee Blackburn

Donghoe Kim

Zhen Li

Anne-Marie Dowgiallo

Rachelle Rosemarie Ihly

Talysa Renae Klein

Methods are described that include contacting an alkyl ammonium metal halide film with an alkyl ammonium halide, where the alkyl ammonium metal halide film includes a first halogen and a metal, the alkyl ammonium halide includes a second halogen, such that the contacting forms an alkyl ammonium metal mixed-halide film that interfaces with the alkyl ammonium metal halide film, where the alkyl ammonium metal mixed-halide film includes the first halogen, the second halogen, and the metal.

Multi-layered perovskites, devices, and methods of making the same

An aspect of the present disclosure is a method that includes exchanging at least a portion of a first cation of a perovskite solid with a second cation, where the exchanging is performed by exposing the perovskite solid to a precursor of the second cation, such that the precursor of the second cation oxidizes to form the second cation and the first cation reduces to form a precursor of the first cation.

Methods for producing perovskite halide films

The present disclosure relates to a method that includes treating a liquid that includes a first precursor at a concentration C, a second precursor at a concentration C, a third precursor at a concentration C, and an additive at a concentration C, where the treating results in a perovskite, each of C, C, and Care between 0.001 M and 100 M, inclusively, and at least one of C/Cor C/Cequals a ratio greater than or equal to zero

Organic-inorganic perovskite materials and methods of making the same

An aspect of the present disclosure is a method that includes applying a solution that includes a first solvent, a halogen-containing precursor, and a metal halide to a substrate to form a coating of the solution on the substrate, contacting the coating with a second solvent to form a first plurality of organo-metal halide perovskite crystals on the substrate, and thermally treating the first plurality of organo-metal halide perovskite crystals, such that at least a portion of the first plurality of organo-metal halide perovskite crystals is converted to a second plurality of organo-metal halide perovskite crystals on the substrate. The halogen-containing precursor and the metal halide are present in the solution at a molar ratio of the halogen-containing precursor to the metal halide between about 1.01:1.0 and about 2.0:1.0, and a property of the second plurality of organo-metal halide perovskite crystals is improved relative to a property of the first plurality of organo-metal halide perovskite crystals.

Organo-metal halide perovskites films and methods of making the same

Described herein is a device that includes an alkyl ammonium metal halide perovskite layer, and a nanostructured semiconductor layer in physical contact with the alkyl ammonium metal halide perovskite layer. The alkyl ammonium metal halide perovskite layer may include methyl ammonium cations. The alkyl ammonium metal halide perovskite layer may include anions of at least one of chlorine, bromine, astatine, and/or iodine. The alkyl ammonium metal halide perovskite layer may include cations of a metal in a 2+ valence state. The metal may include at least one of lead, tin, and/or germanium.

Nanostructure-containing organic-metal halide perovskites

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Dallas, TX, United States of America

Mengjin Yang