Dynax Semiconductor, Inc.

Mengjie Zhou

Naiqian Zhang

A semiconductor device comprises: a substrate; a multilayer semiconductor layer located on the substrate; a source located on the multilayer semiconductor layer, the source including a first source portion inside an active region and a second source portion inside a passive region; a drain located on the multilayer semiconductor layer, the drain including a first drain portion inside the active region and a second drain region inside the passive region; a gate located on the multilayer semiconductor layer, the gate including a first gate portion inside the active region and a second gate portion inside the passive region, and the first gate portion being in a form of interdigital among the first source portion and the first drain portion; and a heat dissipating layer disposed at one or more of the first source portion, the first drain portion, the first gate portion, the second source portion, the second drain portion and the second gate portion.

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Kunshan, China

Mengjie Zhou