Taiwan Semiconductor Manufacturing Comp. Ltd.

Meng-Yi Wu

Ying-Lang Wang

Chih-Mu Huang

I-Chih Chen

Fu-Tsun Tsai

Yung-Fa Lee

Hsing-Chih Lin

Yu-Lung Yeh

Ming-Chi Wu

Chieh-Shuo Liang

Shih-Chang Lin

A semiconductor device includes a semiconductor substrate having a first conductivity type region including a first conductivity type impurity. A first gate structure is on the semiconductor substrate overlying the first conductivity type region. A second conductivity type region including a second conductivity type impurity is formed in the semiconductor substrate. A barrier layer is located between the first conductivity type region and the second conductivity type region. The barrier layer prevents diffusion of the second conductivity type impurity from the second conductivity type region into the first conductivity type region.

Semiconductor device having barrier layer to prevent impurity diffusion

In a method for manufacturing a semiconductor device, a substrate including a gate structure is provided. A source region and a drain region are formed at opposing sides of the gate structure and an implant region for a resistor device is formed in the substrate. Pocket implant regions are formed in the source region and the drain region. A dielectric layer is formed to cover the gate structure and the substrate. A portion of dopants in the pocket implant regions interact with portions of dopants in the source region and the drain region to form lightly doped drain regions above the pocket implant regions. A resistor region of the resistor device is defined on the implant region. A portion of the dielectric layer is removed to form a spacer on a sidewall of the gate structure and a resistor protection dielectric layer on a portion of the implant region.

Integrated fabrication of semiconductor devices

Growing community of inventors

Tainan, Taiwan

Meng-Yi Wu