Epistar Corporation

National Applied Research Laboratories

Meng-Yang Chen

Shih-Chang Lee

Rong-Ren Lee

Jen-Inn Chyi

Ta-Cheng Hsu

Szu-Hung Chen

Shih-Pang Chang

Wen-Kuan Yeh

Guang-Li Luo

Jung-Jen Li

Yuan-Ting Lin

A semiconductor device is provided, which includes an active structure, a first semiconductor layer, a second semiconductor layer, an intermediate layer, a transition layer and a contact layer. The active structure has two sides and includes an active region. The first semiconductor layer and the second semiconductor layer respectively located on the two sides of the active structure. The intermediate layer is located between the second semiconductor layer and the active structure. The transition layer is located on the second semiconductor layer. The contact layer is located on the transition layer.

Semiconductor device

The present disclosure provides a semiconductor stack, a semiconductor device and a method for manufacturing the same. The semiconductor device includes a first semiconductor layer and a light-emitting structure. The first semiconductor layer includes a first III-V semiconductor material, a first dopant, and a second dopant. The light-emitting structure is on the first semiconductor layer and includes an active structure. In the first semiconductor layer, a concentration of the second dopant is higher than a concentration of the first dopant. The first dopant is carbon, and the second dopant is hydrogen.

Semiconductor stack, semiconductor device and method for manufacturing the same

A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure and a light-emitting structure. The light-emitting structure is located between the first semiconductor structure and the second semiconductor structure. The light-emitting structure includes a first multiple quantum well structure containing aluminum and a plurality of semiconductor stacks. Each of the semiconductor stacks is stacked by a well layer and a barrier layer. The light-emitting structure emits an incoherent light. The well layer and the barrier layer in each of the semiconductor stacks include the same quaternary semiconductor material which includes indium (In). The well layer has a first In content percentage larger than 0.53, and the barrier layer has a second In content percentage less than 0.53.

A semiconductor device is provided, which includes an active structure and a first semiconductor layer. The active structure includes an active region having a topmost surface and a bottommost surface, and a first dopant distributing from the topmost surface to the bottommost surface. The first semiconductor layer is located under the active structure and includes a second dopant. The active region includes a semiconductor material including As.

A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure and a light-emitting structure. The light-emitting structure is located between the first semiconductor structure and the second semiconductor structure. The light-emitting structure includes a multiple quantum well structure. The multiple quantum well structure contains aluminum and includes a plurality of semiconductor stacks. Each of the semiconductor stacks is stacked by a well layer and a barrier layer. In each semiconductor stack, the well layer has a thickness larger than a thickness of the barrier layer.

A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.

Heterogeneously integrated semiconductor device and manufacturing method thereof

A semiconductor device includes a first type semiconductor structure, an active structure, and a contact layer. The first type semiconductor structure includes a first lattice constant, a first side and a second side opposite to the first side. The active structure is on the first side of the first type semiconductor structure and emits a radiation, and the radiation has a peak wavelength between 1000 nm and 2000 nm. The contact layer is on the second side of the first type semiconductor structure and includes a second lattice constant. A difference between the first lattice constant and the second lattice constant is at least 0.5%.

The present disclosure provides a semiconductor device which includes a base layer and a buffer structure. The base layer includes a first semiconductor compound having a first lattice constant and including a plurality of elements, and an atomic radius of one of the plurality of elements which has the largest atomic radius is defined as a first atomic radius. The buffer structure includes a second semiconductor compound and a first additive. The second semiconductor compound has a second lattice constant and the first additive has a second atomic radius. The second lattice constant is larger than the first lattice constant, and the second atomic radius is larger than the first atomic radius.

A semiconductor substrate is provided in the present disclosure. The semiconductor substrate includes a first semiconductor layer and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer has a first lattice constant (L1) and the second semiconductor layer has a second lattice constant (L2). A ratio of a difference (L2-L1) between the second lattice constant (L2) and the first lattice constant (L1) to the first lattice constant (L1) is greater than 0.036.

Semiconductor substrate

A light-emitting device is provided, which includes a first semiconductor structure, an active structure, a second semiconductor structure, and a first blocking layer. The first semiconductor structure has a first conductivity type. The active structure is on the first semiconductor structure and has a first dopant. The second semiconductor structure is on the active structure and has a second conductivity type different from the first conductivity type. The first blocking layer is between the second semiconductor structure and the active structure. The first blocking layer has the first dopant with a first doping concentration decreasing along a depth direction from the second semiconductor structure to the first semiconductor structure.

Light-emitting device

A heterogeneously integrated semiconductor device includes a substrate comprising a first material; a recess formed within the substrate and having a bottom portion with a first width, a top portion with a second width and a middle portion with a third width larger than the first width and the second width; and a first semiconductor layer filled in the bottom portion and including a second material different from the first material.

A heterogeneously integrated semiconductor devices includes a base substrate; a Ge-containing film formed on the base substrate; a PMOSFET transistor having a first fin formed on the Ge-containing film; and a NMOSFET transistor having a second fin formed on the Ge-containing film; wherein the PMOSFET transistor and the NMOSFET transistor compose a CMOS transistor, and the first fin comprises Ge-containing material and the second fin comprises a Group III-V compound.

A method for making a light-emitting device is provided. The method comprises the steps of providing a substrate, forming a nucleation layer on the substrate, forming a semiconductor stack on the nucleation layer, and separating the semiconductor stack from the nucleation layer to expose the nucleation layer.

Growing community of inventors

Hsinchu, Taiwan

Meng-Yang Chen