Leland Stanford Junior University

Yangtze Memory Technologies Co., Ltd.

Meng Xiao

Shanhui Fan

Yu Shi

Jingjing Geng

Momchil Minkov

Cheng Guo

Hui Zhang

Yang Zhou

Zhipeng Wu

Xiangning Wang

Lu Zhang

Kai Han

Zhen Guo

Jiajia Wu

Hang Yin

Pan Wang

An isotropic imaging filter is provided that includes a photonic crystal slab, where the photonic crystal slab includes a square lattice of air through holes, a dielectric constant, a thickness (d), a through hole radius (r), and a lattice constant (a), where the square lattice of air holes are separated according to a value of the lattice constant, where the thickness is configured according to d=M(a), where the through hole radii is configured according to r=N(a), where the thickness and the hole radii are configured to generate isotropic bands of guided resonances of an incident image.

Isotropic filters in spatial frequency domain by a photonic crystal slab

Aspects of the disclosure provide a method for fabricating a semiconductor device having an first stack of alternating insulating layers and sacrificial word line layers arranged over a substrate, the first stack including a core region and a staircase region. The method can include forming a first dielectric trench in the core region of the first stack, forming a second dielectric trench that is adjacent to and connected with the first dielectric trench in the staircase region of the first stack, and forming dummy channel structures extending through the first stack where the dummy channel structures are spaced apart from the second dielectric trench.

Method of forming top select gate trenches

Embodiments of three-dimensional (3D) memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack on the substrate, a plurality of channel structures each extending vertically through the memory stack, and one or more isolation structures. The memory stack includes a plurality of interleaved conductive layers and dielectric layers. An outmost one of the conductive layers toward the substrate is a source select gate line (SSG). Each isolation structure surrounds at least one of the channel structures in a plan view to separate the SSG and the at least one channel structure.

Three-dimensional memory devices having isolation structure for source select gate line and methods for forming the same

Growing community of inventors

Wuhan, China

Meng Xiao