Hefei Core Storage Electronic Limited

Meng Xiao

Hao-Zhi Lee

Hui Xie

Qi-Ao Zhu

Ren Jun Tang

Dong Sheng Guan

A data programming method, a memory storage device and a memory control circuit unit are provided. The method includes presetting a programming mode of a plurality of first type physical erasing units as a first programming mode, and presetting a programming mode of a plurality of second type physical erasing units as a second programming mode. The method also includes obtaining a change parameter according to usage parameters of the first type physical erasing units and the second type physical erasing units. The method further includes determining whether the change parameter matches a first change condition, and if the change parameter matches the first change condition, programming a write-data into the second type physical erasing unit by using the first programming mode.

Data programming method, memory storage device and memory control circuit unit

A memory management method is provided according to an exemplary embodiment of the disclosure. The method includes: receiving a plurality of commands from a host system; counting a newest idle time corresponding to the commands and a past average command-receiving-time-interval corresponding to the commands; and dynamically changing a work mode of a memory storage device from a first work mode to a second work mode if the newest idle time is larger than a first threshold value and the past average command-receiving-time-interval is larger than a second threshold value. Therefore, a power consumption of the memory storage device can be reduced and a work mode of the memory storage device may not be changed too frequently.

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Meng Xiao