United Semiconductor Corp.

United Semiconductor Circuit Corp.

United Semicondutor Circuit Corp.

Meng-Lin Yeh

Yang-Hui Fang

A method of forming a test key architecture on a silicon wafer. The method includes forming trench isolation regions between a source region and a drain region. Thereafter, a plurality of active regions are formed in parallel above the trench isolation regions such that the smallest possible width for each active region is chosen to reduce overall area occupation and increase the number of test keys. Next, a long pass gate is formed above the trench isolation regions, crossing and covering the parallel-connected active regions. Consequently, the effect due to stress-induced defect and the probability of leakage current due to parasitic device effect are greatly increased.

Method of forming a test key architecture

A method for measuring kink effect of a first semiconductor device including the following steps is disclosed herein. Firstly, choose a second and a third semiconductor device. The first, the second and the third semiconductor device have the same channel length and different channel width. The next step, apply a voltage on the drain electrode of respective semiconductor device. The voltage is applied to the drain electrode and the DIBL effect is avoided. The following step, measure the threshold voltage of every. Next, measure the source to drain current by applying the respective threshold voltages on the respective gate electrode of every semiconductor device. Subsequently, generates a slope by dividing a first drain current difference by a first channel width difference. The first drain current difference is formed of subtracting a second drain to source current of the second semiconductor devices by and a third drain to source current of the third semiconductor device. The first channel width difference is formed of subtracting the second channel width of the second semiconductor device and the third channel width of the third semiconductor device. Then, subtract a first drain to source current of the first semiconductor device by a product to acquire a parasitic current. The product is formed of the product of the slope and the channel width of the third semiconductor. Finally, divide the parasitic current by a channel length of the first semiconductor device to obtain the linear current density as the index representing the kink effect of the first semiconductor device.

Method for measuring current density in a semiconductor device with kink

A method for measuring the extent of the kink effect of a transistor is disclosed herein. The aforementioned method includes the following steps. The first, generate a simulated drain current versus a gate voltage according to the transistor. Secondary, generate a drain current versus the gate voltage. Finally, integrate a difference between the simulated drain current and the drain current by the gate voltage.

Method for measuring the kink effect of a semiconductor device

A test connecting device including testkey and probe card for use in the testing of integrated circuits is provided. This test connecting device features the use of a symmetrical node-potential scheme that can offset the parasite capacitances between the probe pins on the probe card, thus allowing an increase in frequency response of the probe card. The probe card includes at least six probe pins arranged in a row; and correspondingly, the testkey includes at least six test pads for the six probe pins to make electrical contacts with them during the testing while the probe card is coupled to the testkey. This test connecting device can allow a high-frequency output signal to pass therethrough to the test instrument without causing attenuation to the signal. Moreover, the use of the test connecting device can eliminate the need to install additional hardware components, such as frequency dividers or additional stages to ring oscillators. The test connecting device is thus easy to implement, without having to take up further circuit areas in the integrated circuits.

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Taipei, Taiwan

Meng-Lin Yeh