Peking University

Other

Meng Lin

Li Wang

Xing Zhang

Ru Huang

Min Li

Xia An

Zhiqiang Li

Quanxin Yun

Pengqiang Liu

Bin Lin

Xiaoduo Yu

An air/water advanced oxidation purification device includes a draft tube, a motor and at least one spiral partition plate. The spiral partition plate is fixed on an output shaft of the motor. The motor is supported in the draft tube and used for driving the spiral partition plate to rotate at uniform speed around the central axis of the draft tube and for driving air or water to enter into the draft tube. The spiral partition plate includes a plurality of miniature blades arranged along a radial direction of the spiral partition plate, each of the miniature blades includes a plurality of first and second protrusions continuously and staggered arranged along the radial direction and protruding towards two sides of the spiral partition plate, respectively. Air or water is purified through photo-catalytic advanced oxidation reaction or electro-catalytic oxidation-reduction reaction taken place on the surfaces of the spiral partition plate.

Air/water advanced oxidation purification device and spiral partition plate thereof

The present invention discloses a preparation method of a germanium-based Schottky junction, comprising, cleaning a surface of N-type germanium-based substrate, then depositing a layer of CeOon the surface, and further depositing a layer of metal. The stability Ce&#x2014;O&#x2014;Ge bonds can be formed at the interface after rare earth oxides CeOare in contact with the germanium substrate, and this is beneficial to reduce the interface state density, improve the quality of the interface, and reduce the MIGS and suppress Fermi-level pinning. Meanwhile, the tunneling resistance introduced by CeObetween the metal and the germanium substrate is smaller relative to the case of SiN, AlO, GeNor the like. In view of the excellent surface characteristics and small conduction band offset relative to the germanium substrate, interposing of the CeOdielectric layer is applicable to the preparation the germanium-based Schottky junction having a low resistivity.

Preparation method of a germanium-based schottky junction

The present invention discloses a method for processing a gate dielectric layer deposited on a germanium-based or Group III-V compound-based substrate, belonging to a semiconductor device field. The method comprises the steps of depositing a high-K gate dielectric layer on the germanium-based or Group III-V compound-based substrate, and then performing a plasma process to the high-K gate dielectric layer by using fluorine plasma, wherein during the plasma process, a guiding electric field is applied so that fluorine ions, when being accelerated to a surface of the gate dielectric layer, has an energy of 5-50 eV and the fluorine plasma drifts into the high-K gate dielectric layer, a ratio of a density of the fluorine ions in the high-K gate dielectric layer and a density of oxygen atoms in the high-K gate dielectric layer being 0.01-0.15:1.

Method for processing gate dielectric layer deposited on germanium-based or group III-V compound-based substrate

Disclosed herein is an interface treatment method for germanium-based device, which belongs to the field of manufacturing technologies of ultra large scaled integrated (ULSI) circuits. In the method, the natural oxide layer on the surface of the germanium-based substrate is removed by using a concentrated hydrochloric acid solution having a mass percentage concentration of 15%&#x2dc;36%, and dangling bonds of the surface are performed a passivation treatment by using a diluted hydrochloric acid solution having a mass percentage concentration of 5%&#x2dc;10% so as to form a stable passivation layer on the surface. This method makes a good foundation for depositing a high-K (high dielectric constant) gate dielectric on the surface of the germanium-based substrate after cleaning and passivating, enhances quality of the interface between the gate dielectric and the substrate, and improves the electrical performance of germanium-based MOS device.

Interface treatment method for germanium-based device

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Beijing, China

Meng Lin