Freescale Semiconductor,inc.

Nxp USA, Inc.

Nxp B.v.

Meng Kong Lye

You Ge

Zhijie Wang

Zhigang Bai

Chetan Verma

Penglin Mei

Jinzhong Yao

Xingshou Pang

Shailesh Kumar

Rishi Bhooshan

Sumit Varshney

Chee Seng Foong

Burton Jesse Carpenter

Lan Chu Tan

Kai Yun Yow

Poh Leng Eu

Xuesong Xu

Kabir J Mirpuri

Wai Keong Wong

Mariano Layson Ching, Jr

Jun Li

Seng Kiong Teng

Soo Choong Chee

Vikas Garg

Lidong Zhang

Quan Chen

Kendall Dewayne Phillips

Sumeet Aggarwal

Stanley Job Doraisamy

Norazham Mohd Sukemi

Sheau Mei Lim

Pei Fan Tong

A Quad Flat No-Lead (QFN) package comprises a semiconductor die, a lead frame and molding compound. The lead frame comprises a die pad having a substantially rectangular inner part and a plurality of protrusions around the periphery thereof and contiguous therewith and extending outwardly therefrom, and a plurality of leads around the four sides of the die-pad. The molding compound encapsulates the semiconductor die and forming the package. The molding compound has a respective moat therein between each side of the die pad and a respective set of leads. The die pad has a plurality of trenches extending from the second surface of the die pad towards the first surface at least in the inner part of the die pad. The plurality of the trenches each extend across a protrusion to the moat.

QFN semiconductor package, semiconductor package and lead frame

A power die package includes a lead frame having a flag with power leads on one lateral side and signal leads on one or more other lateral sides. A power die is attached to a bottom surface of the flag and electrically connected to the power leads with a conductive epoxy. A control die is attached to a top surface of the flag and electrically connected to the signal leads with bond wires. A mold compound is provided that encapsulates the dies, the bond wires, and proximal parts of the leads, while distal ends of the leads are exposed, forming a PQFN package.

Power die package

A flexible semiconductor device includes a first tape having bonding pads and conductive traces formed. A semiconductor die having a bottom surface is attached to the first tape and electrically connected to the bond pads by way of electrical contacts. A second tape is attached to a top surface of the semiconductor die. The first and second tapes encapsulate the semiconductor die, the electrical contacts, and at least a part of the conductive traces.

Method of making flexible semiconductor device with graphene tape

A semiconductor device is assembled using a lead frame having leads that surround a central opening. The leads have proximal ends near to the central opening and distal ends spaced from the central opening. A heat sink is attached to a bottom surface of the leads and a semiconductor die is attached to a top surface of the leads, where the die is supported on the proximal ends of the leads and spans the central opening. Bond wires electrically connect electrodes on an active surface of the die and the leads. An encapsulant covers the bond wires and at least the top surface of the leads and the die. The distal ends of the leads are exposed to allow external electrical communication with the die.

Semiconductor device with lead frame that accommodates various die sizes

A semiconductor sensor device includes a lead frame flag having a vent hole, an interposer mounted on the flag and having a vent hole in fluid communication with the vent hole of the flag, and a sensor die having an active region. The sensor die is mounted on and electrically connected to the interposer in a flip-chip manner such that the vent hole of the interposer is in fluid communication with the active region of the sensor die. Bond wires electrically connect the interposer to one or more other components of the device. A molding compound covers the sensor die, the interposer, and the bond wires. The sensor die may be a pressure-sensing (P-cell) die, and the device may also include a micro-controller unit (MCU) die and an acceleration-sensing (G-cell) die, for tire pressure monitoring applications.

Sensor device with flip-chip die and interposer

Embodiments of packaged semiconductor devices and lead frames for such devices are provided, such as a lead frame including: a row of lead fingers, wherein an outer end of each lead finger is connected to a leaded side of the lead frame; a package body perimeter that indicates placement of a package body of the packaged semiconductor device, wherein an inner end of each lead finger falls within the package body perimeter; a retention tab that protrudes from an interior edge of a non-leaded side of the lead frame, wherein the retention tab falls outside of the package body perimeter; and a non-conductive tie bar structure attached to the retention tab, wherein the non-conductive tie bar structure falls within the package body perimeter.

Hybrid lead frame for semiconductor die package with improved creepage distance

Flexible semiconductor device with graphene tape

A lead frame for a packaged integrated circuit (IC) device has a die receiving area and leads that extend outwardly from the die receiving area. The leads have an inner lead area proximate the die receiving area and an outer lead area distant from the die receiving area. Notches are formed in a surface of alternate ones of the leads, in the inner lead area proximate to the outer lead area. The notches facilitate bending of the alternate leads when the leads are subjected to a downward force by a mold tool, such that one set of leads lies in a first plane and another set lies in a second plane spaced from the first plane. The leads in the first plane can be formed into Gull Wing leads and the other set of leads into J-leads.

Lead frame with bendable leads

A lead frame for a packaged integrated circuit (IC) device has alternating first and second leads that protrude from a package body in respective first and second planes, where the second plane is parallel to and below the first plane. The first leads are formed into Gull Wing shaped leads and the second leads are formed into J-shaped leads. Inner lead portions of the first and second leads are maintained in the first plane with a tape. An inner lead portion of each of the second leads, proximate to and extending to the outer lead portion, is down-set, so that when the outer lead portion is pressed down by a mold tool to locate the outer lead portion of the second leads in the second plane, the inner lead portion of the second leads is maintained in the first plane and does not separate from the tape.

Lead frame for integrated circuit device having J-leads and Gull Wing leads

A semiconductor device includes a lead frame having leads arranged in an array that has columns extending in a first direction and rows extending in a second direction. Each lead includes a bond pad portion and a solder pad portion down-set from the bond pad portion. The solder pad portion horizontally extends from the bond pad portion in the first direction. A semiconductor die is mounted on a set of the plurality of leads and electrically connected to the bond pad portion of at least one of the plurality of leads. The semiconductor die, and the plurality of leads are encapsulated by a molding material, wherein the molding material defines a package body, and the solder pad portion of each lead is exposed at a back side of the package body.

Semiconductor device and lead frame with high density lead array

A lead frame for a packaged integrated circuit (IC) device has alternating first and second leads that protrude from a package body in respective first and second planes, where the second plane is parallel to and below the first plane. The first leads are formed into Gull Wing shaped leads and the second leads are formed into J-shaped leads. Inner lead portions of the first and second leads are maintained in the first plane with a tape. An inner lead portion of each of the second leads includes a deformation area that facilitates maintaining the tape in contact with the inner lead area of the second leads, even when a mold tool presses down on an outer lead side of the second leads to place the outer lead ends of the second leads in the second plane.

Lead frame for integrated circuit device having J-leads and gull wing leads

A woven signal-routing substrate for a wearable electronic device has conductive warps and wefts that are woven with each other and with insulative warps and wefts. Woven electrical cross-connections are formed at some of the intersections of the conductive warps and wefts, while no electrical cross-connections are formed at other intersections, to provide a signal-routing architecture for the substrate that can be used to route signals between electronic components of the wearable device. Non-connecting intersections are formed using insulative warps that are sufficiently thicker than the relatively thin conductive warps to enable a conductive weft to cross a conductive warp without making physical contact at intersection locations where an electrical cross-connection is not desired. The woven electrical cross-connections may be formed at other intersection locations using weaving topologies that ensure that the corresponding mutually orthogonal warps and wefts do contact one another.

Woven signal-routing substrate for wearable electronic devices

An integrated circuit (IC) die has side input/output (IO) pads located along each side of the die interior. Each die corner has a corner IO pad. The side IO pads adjacent to the corner IO pads have shortened passivation regions in the top metal layer (TML) that define TML access regions. TML traces run through the TML access regions to connect the corner IO pads to the die interior. Providing corner IO pads enables an IC die to have up to four more IO pads than a comparable conventional IC die that does not have any corner IO pads, or an IC die to have the same number of IO pads within a smaller overall footprint.

Integrated circuit die with corner IO pads

An integrated circuit (IC) package has a base, side walls mechanically connected to the base, IC dies respectively mounted on inner surfaces of the side walls or the base, and electrical connections connecting a corresponding IC die to another component of the IC package. In one embodiment, each die is electrically connected to only bond pads on its corresponding side wall or base. Each such side wall and the base have routing structures (e.g., copper traces) that connect each bond pad to another component of the IC package. The IC package is assembled using a flexible substrate that has side regions that rotate relative to the base such that the routing structures do not break. By connecting an IC die only to bond pads on its corresponding side wall or base with bond wires, the bond wires will not break during side-wall rotation.

IC package having non-horizontal die pad and flexible substrate therefor

A semiconductor device includes a package body, a semiconductor die embedded in the package body and a heat spreader attached to a top surface of the package body and spaced from semiconductor die. The heat spreader may be formed of solder that is melted within a recess in the top surface of the package body.

Growing community of inventors

Shah Alam, Malaysia

Meng Kong Lye