Advanced Semiconductor Engineering, Inc.

Meng-Kai Shih

Tang-Yuan Chen

Chih-Pin Hung

Shin-Luh Tarng

Ian Hu

Teck-Chong Lee

Jin-Feng Yang

Chin-Li Kao

Yu-Chang Chen

Jin-Yuan Lai

Tse-Chuan Chou

Ying-Xu Lu

Hsuan Yu Chen

Bo-Syun Chen

Ming-Han Wang

Chang-Chi Lee

Chun Hung Tsai

A semiconductor device package includes a first conductive layer, a second conductive layer and a third conductive layer. The first conductive layer has a first pitch. The second conductive layer has a second pitch and is arranged at two different sides of the first conductive layer. The third conductive layer has a third pitch and is disposed above the first conductive layer and the second conductive layer. The third conductive layer is electrically connected to the first conductive layer. The first pitch is smaller than the third pitch, and the third pitch is smaller than the second pitch.

Semiconductor device packages and methods of manufacturing the same

An optical measurement equipment includes an adjustment apparatus and at least two image capturing devices. The image capturing devices have a depth-of-field and attached to the adjustment apparatus. The image capturing devices are adjusted by the adjustment apparatus such that a portion to be measured of a workpiece is located within the depth-of-field of the image capturing devices.

Optical measurement equipment and method for measuring warpage of a workpiece

A semiconductor device package includes a substrate, an electronic component disposed on the substrate, a supporting structure disposed on the substrate and surrounding the electronic component, and a heat spreading structure disposed on the supporting structure. A length of the supporting structure and a length of the heat spreading structure are greater than a length of the substrate.

The present disclosure relates to a semiconductor device package including a substrate, a semiconductor device and an underfill. The substrate has a first surface and a second surface angled with respect to the first surface. The semiconductor device is mounted on the first surface of the substrate and has a first surface facing the first surface of the substrate and a second surface angled with respect to the first surface of the substrate. The underfill is disposed between the first surface of the semiconductor device and the first surface of the substrate. The second surface of the substrate is located in the substrate and external to a vertical projection of the semiconductor device on the first surface of the substrate. A distance between the second surface of the substrate and an extension of the second surface of the semiconductor device on the first surface of the substrate is less than or equal to twice a distance between the first surface of the semiconductor device and the first surface of the substrate. The second surface of the substrate extends along at least three sides of the semiconductor device.

Semiconductor device package having continously formed tapered protrusions

A thermal conductive device includes a first conductive plate, a second conductive plate, a plurality of wicks and a fluid. The first conductive plate has a first portion adjacent to edges of the first conductive plate and a second portion far away from the edges. The second conductive plate has a first portion adjacent to edges of the first conductive plate and a second portion far away from the edges. The first portion and the second portion of the first conductive plate are respectively connected to the first portion and the second portion of the second conductive plate to define a chamber. The plurality of wicks are disposed within the chamber. The fluid is disposed within the chamber.

Semiconductor device package and method for manufacturing the same

An apparatus includes: a first image capture module, a second image capture module, and a first projector. The first image capture module has a first optical axis forming an angle from approximately 70&#xb0; to approximately 87&#xb0; with respect to the surface of a carrier. The second image capture module has a first optical axis forming an angle of approximately 90&#xb0; with respect to the surface of the carrier. The first projector has a first optical axis forming an angle from approximately 40&#xb0; to approximately 85&#xb0; with respect to the surface of the carrier.

Apparatus and method for measuring warpage

A semiconductor package structure includes: (1) a first substrate; (2) at least one first semiconductor element attached to the first substrate; and (3) a second substrate including a plurality of thermal vias and a plurality of conductive vias, wherein one end of each of the thermal vias directly contacts the first semiconductor element.

Semiconductor package structure and method for manufacturing the same

A semiconductor device package includes a substrate, a first electronic component, a second electronic component, a heat dissipation lid and a thermal isolation. The substrate has a surface. The first electronic component and the second electronic component are over the surface of the substrate and arranged along a direction substantially parallel to the surface. The first electronic component and the second electronic component are separated by a space therebetween. The heat dissipation lid is over the first electronic component and the second electronic component. The heat dissipation lid defines one or more apertures at least over the space between the first electronic component and the second electronic component. The thermal isolation is in the one or more apertures of the heat dissipation lid.

Semiconductor device package

A semiconductor package structure includes a first substrate, at least one first semiconductor element and a second substrate. The first semiconductor element is attached to the first substrate. The second substrate defines a cavity and includes a plurality of thermal vias. One end of each of the thermal vias is exposed in the cavity, and the first semiconductor element is disposed within the cavity and thermally connected to the thermal vias.

A semiconductor package includes a substrate and a semiconductor device. The semiconductor device includes a body having a center, a layer disposed adjacent to the body, and a plurality of conductive pillars configured to electrically connect the semiconductor device to the substrate. The layer defines a plurality of openings. Each of the plurality of conductive pillars extends at least partially through a corresponding one of the plurality of openings. An offset between a first central axis of the each of the plurality of conductive pillars and a second central axis of the corresponding one of the plurality of openings varies with distance between the first central axis and the center of the body. The second central axis of the corresponding one of the plurality of openings is disposed between the first central axis of the each of the plurality of conductive pillars and the center of the body.

Growing community of inventors

Kaohsiung, Taiwan

Meng-Kai Shih