Macronix Internationalco., Ltd.

Meng-Han Tsai

Kuang-Wen Liu

Kuan-Chih Chen

Yi-Chen Wang

The semiconductor structure includes a semiconductor device, a first metallization layer on the semiconductor device, a second metallization layer on the first metallization layer, and a third dielectric layer between the first metallization layer and the second metallization layer. The first metallization layer includes a first dielectric layer and a first metal layer disposed in the first dielectric layer, wherein the first metal layer has a first thickness, and the first metal layer comprises copper. The third dielectric layer has a second thickness, and a ratio of the second thickness of the third dielectric layer to the first thickness of the first metal layer is ranged from about 3 to about 20.

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Yunlin County, Taiwan

Meng-Han Tsai