Tsinghua University

Taiwan Semiconductor Manufacturing Comp. Ltd.

Industrial Technology Research Institute

Macronix International Co., Ltd.

National Yang Ming Chiao Tung University

Lite-on Technology Corporation

Lite-on Electronics (guangzhou) Limited

Meng-Fan Chang

Win-San Khwa

Jui-Jen Wu

Jen-Chieh Liu

Yi-Lun Lu

Tzu-Chiang Chen

Hung-Li Chiang

Jer-Fu Wang

Cheng-Xin Xue

Shin-Jang Shen

Yen-Cheng Chiu

Wei-Cheng Wu

Yu-Der Chih

Ku-Feng Lin

Shyh-Shyuan Sheu

Chien-Chen Lin

Jian-Wei Su

Hiroyuki Yamauchi

Chien-Fu Chen

Ping-Chun Wu

Jia-Jing Chen

Ta-Wei Liu

Yen-Hsiang Huang

Wei-Hao Chen

Chieh-Pu Lo

Wen-Zhang Lin

Sheng-Po Huang

Albert Lee

Je-Syu Liu

Ming-Pin Chen

Jin-Sheng Ren

Li-Ya Lai

Xin Si

Chun-Hsiung Hung

Xinyu Bao

Jin Cai

Han-Wen Hu

Chia-Chi Liu

Yih-Shan Yang

Tsung-Hsien Huang

Yu-Lin Chen

Tsung-Yuan Huang

Elia Ambrosi

Pi-Feng Chiu

Tien-Fu Chen

Hui-Yao Kao

Che-Wei Wu

May-Be Chen

Tzu-Hsien Yang

Keng-Hao Yang

Jui Jen Wu

Ching-Hao Chuang

Je-Min Hung

Li-Yang Hong

Wei-Hsing Huang

Wei-Yu Lin

Huan-Ting Lin

Yung-Ning Tu

Shou-Nan Hung

Yen-Chi Chou

Yao-Jen Kuo

Yen-Huei Chen

Chao-I Wu

Tung Ying Lee

Tung-Ying Lee

Chien-Yuan Chen

Pei-Ling Tseng

Pei-Chia Chiang

Wen-Pin Lin

Yi-Ju Chen

Tzu-Hsiang Su

Jen-Chien Fu

Chun-Ying Lee

Ting-Wei Chang

Chih-Cheng Hsieh

Hon-Sum Philip Wong

Yi-Tse Hung

Tung-Cheng Chang

Chih-He Lin

Kea-Tiong Tang

Kerem Akarvardar

Pei-Yuan Li

Yu-Fan Lin

Zhe-Hui Lin

Yen-Yao Wang

Hsien-Te Chen

Nai-Yin Sung

Yen-Chen Liu

Chia-Chen Kuo

Ting-Hao Chang

Syuan-Hao Sie

Rawan Naous

Ru-Hui Liu

Shuai-Fan Chen

Chuan-Jia Jhang

Wei-Chang Zhao

Hsiang-Pan Li

Chia-Yin Li

Jui-Yu Hung

Li-Yue Huang

A memory device includes a transistor and a memory cell. The transistor includes a gate electrode disposed over a substrate and source/drain regions in the substrate beside the gate electrode. The memory cell is disposed over the transistor and includes a bottom electrode electrically connected to one of the source/drain regions, a top electrode disposed over the bottom electrode, and a first bit and a second bit separated from each other and disposed between the bottom electrode and the top electrode.

Memory devices and methods of forming the same

A memory device including a plurality of memory cells, at least one of the plurality of memory cells includes a first transistor, a second transistor, and a third transistor. The first transistor includes a first drain/source path and a first gate structure electrically coupled to a write word line. The second transistor includes a second drain/source path and a second gate structure electrically coupled to the first drain/source path of the first transistor. The third transistor includes a third drain/source path electrically coupled to the second drain/source path of the second transistor and a third gate structure electrically coupled to a read word line. Where, the first transistor, and/or the second transistor, and/or the third transistor is a ferroelectric field effect transistor or a negative capacitance field effect transistor.

3T memory with enhanced speed of operation and data retention

A dynamic differential-reference time-to-digital converter for computing-in-memory applications is controlled by a bias reference and a predetermined setting parameter, and includes a configurable main-reference selector and a plurality of time-to-digital converters. The configurable main-reference selector is configured to receive a plurality of edge-output signals, select one of the edge-output signals as a main reference and select others of the edge-output signals as a plurality of edge selected signals according to the predetermined setting parameter. One of the time-to-digital converters is configured to compare the bias reference with the main reference to output a bias multiplication-and-accumulation value, and others of the time-to-digital converters are configured to compare the main reference with the edge selected signals to output a plurality of differential multiplication-and-accumulation values. The bias multiplication-and-accumulation value and the differential multiplication-and-accumulation values are dynamically adjusted according to the bias reference and the predetermined setting parameter.

Memory array structure with dynamic differential-reference based readout scheme for computing-in-memory applications, dynamic differential-reference time-to-digital converter for computing-in-memory applications and computing method thereof

A memory test circuit is provided. The memory test circuit is disposed in a memory chip and electrically coupled to a memory macro of the memory chip. A high speed clock receives an input signal and an external clock signal. The input signal includes a plurality of test bits. A finite state machine controller provides a pattern type. A pattern generator generates and provides a test signal to at least one memory cell of the memory chip to write the test signal to the at least one memory cell based on the pattern type and the external clock signal. A test frequency of the test signal is determined based on the high speed clock. An output comparator outputs a comparison signal based on a difference between the test signal and a readout signal corresponding to the test signal read from the at least one memory cell.

Memory test circuit, memory chip, and testing method of memory chip

The disclosure introduces a shift register is configured to enter a low power mode by disabling a portion of flip-flops (FFs) that handles upper bits of input data. The shift register includes first FF(s), second FF(s) and gating circuit. The first flip-flop (FF), includes input terminal coupled to first portion of input data. The second FF includes input terminal coupled to second portion of input data, an output terminal, a clock terminal coupled to a clock signal, a power terminal coupled to a supply power. The second portion of the input data is subsequent to the first portion of the input data. The gating circuit is coupled to the output terminal of the first FF, and configured to disable the second FF for storing the second portion of a subsequent input data according to output data currently being stored in the first FF.

Shift register having low power mode

A static random-access memory (SRAM) cell including a transistor is introduced. The transistor includes substrate and gate stack structure disposed over the substrate, in which the gate stack structure includes a gate oxide layer, a ferroelectric layer, and a conductive layer. The gate oxide layer is disposed over the substrate; the ferroelectric layer is disposed over the gate oxide layer, wherein the ferroelectric layer has a negative capacitance effect; and the first conductive layer, disposed over the ferroelectric layer. A method of adjusting a threshold voltage of a transistor in the SRAM is also introduced.

SRAM memory cell device comprising ferroelectric access and storage transistors

A circuit includes first and second data lines, a sense amplifier including first and second input terminals, a first p-type metal-oxide-semiconductor (PMOS) transistor coupled in series with a first capacitive device between the first data line and the second input terminal, a second PMOS transistor coupled in series with a second capacitive device between the second data line and the first input terminal, a third PMOS transistor coupled between the first data line and the first input terminal, a fourth PMOS transistor coupled between the second data line and the second input terminal, a first n-type metal-oxide-semiconductor (NMOS) transistor configured to selectively couple each of the first PMOS transistor and the first capacitive device to a ground node, and a second NMOS transistor configured to selectively couple each of the second PMOS transistor and the second capacitive device to the ground node.

Sense amplifier circuit and method

A circuit includes a sense amplifier, a first clamping circuit, a second clamping circuit, and a feedback circuit. The first clamping circuit includes first clamping branches coupled in parallel between the sense amplifier and a memory array. The second clamping circuit includes second clamping branches coupled in parallel between the sense amplifier and a reference array. The feedback circuit is configured to selectively enable or disable one or more of the first clamping branches or one or more of the second clamping branches in response to an output data outputted by the sense amplifier.

Memory devices, circuits and methods of adjusting a sensing current for the memory device

An integrated circuit includes a memory storage having bit cells, a write path switch configured to have a connection state determined by a reliability indicator, and a write driver having an input configured to receive an input data from a write terminal through either a first write path or a second write path. The input data received through the first write path is configured to be equal to the data at the write terminal, and the input data received through the second write path is configured to be a bitwise complement of the data at the write terminal. The reliability indicator is configured to be set based on a majority bit value in the data or based on a minority bit value in the data.

Non-volatile memory stored with encoded data

The disclosure provides a method for controlling a sense amplifier. The control device includes a latch circuit and a control circuit. The latch circuit receives a plurality of memory data signals from the sense amplifier, wherein the latch circuit respectively generates a plurality of reference data signals based on the plurality of memory data signals. The control circuit is coupled to the latch circuit, provides an enable signal to the sense amplifier in response to a pass gate signal of the sense amplifier, and stops providing the enable signal in response to at least one of the plurality of reference data signals, wherein the enable signal controls a sensing period of the sense amplifier.

Method for controlling sense amplifier and control device using the same

In some aspects of the present disclosure, a memory array structure is disclosed. In some embodiments, the memory array structure includes a word array. In some embodiments, the word array stores an N-bit word. In some embodiments, the word array includes a plurality of first memory structures and a plurality of second memory structures. In some embodiments, each first memory structure includes a first transistor and a first memory element. In some embodiments, each second memory structure includes a second transistor and a plurality of second memory elements, each second memory element includes a first end and a second end, the first end of each second memory element is coupled to a corresponding bit line, and the second end of each second memory element is coupled to a first end of the second transistor.

Memory array structure

The sense amplifier circuit includes a differential amplifier, a first switch, and a second switch. The differential amplifier includes a first input node, a second input node, a first output node, and a second output node. The differential amplifier amplifies a voltage difference of the first output node and the second output node according to a first input voltage of the first input node and a second input voltage of the second input node. A control node of the first (second) switch is coupled to a control line, the first (second) switch is coupled to the first (second) input node, and the first (second) switch is coupled to the first (second) output node. The first (second) switch pre-charges the first (second) input node by a first (second) output voltage of the first (second) output node while the control line is received a select signal.

Sense amplifier circuit, memory circuit, and sensing method thereof

A memory includes a memory device, a reading device and a feedback device. The memory device stores a plurality of bits. The reading device includes first and second reading circuits coupled to the memory device. The second reading circuit is coupled to the first reading circuit at a first node. The first and second reading circuits cooperates with each other to generate a first voltage signal at the first node based on at least one first bit of the plurality of bits. The feedback device adjusts at least one of the first reading circuit or the second reading circuit based on the first voltage signal. The first and second reading circuits generate a second voltage signal, different from the first voltage signal, corresponding to the bits, after the at least one of the first reading circuit or the second reading circuit is adjusted by the feedback device.

Memory and operating method thereof

Memory systems and operating method of a memory system are provided. The memory system utilized for performing a computing-in-memory (CiM) operation comprises a memory array and a processing circuit. The memory array comprises a plurality of memory cells. The processing circuit is coupled to the memory array and comprises a programming circuit and a control circuit. The programming circuit is coupled to the memory array and configured to perform a write operation for programming electrical characteristics of the memory cells. The control circuit is coupled to the programming circuit and configured to: receive a plurality of weight data corresponding to a plurality of weight values; and control the write operation performed by the programming circuit, so the electrical characteristics of the memory cells are programmed following a sequential order of the weight values.

Memory system and operating method of memory system

A memory test circuit is provided. The memory test circuit is disposed in a memory array and including: a test array, including test cells out of memory cells of the memory array; a write multiplexer, configured to selectively output one of a test signal and a reference voltage based on a write measurement signal, wherein the test signal is output to write into at least one test cell and the reference voltage is output to a sense amplifier; and a read multiplexer, configured to selectively receive and output one of a readout signal corresponding to the test signal and an amplified signal based on a read measurement signal, wherein the readout signal is read from the at least one test cell and the amplified signal is obtained for a read margin evaluation from the sense amplifier by amplifying a voltage difference between the readout signal and the reference voltage.

Memory test circuit, memory array, and testing method of memory array

Growing community of inventors

Taichung, Taiwan

Meng-Fan Chang