Ememory Technology Inc.

Meng-Chiuan Wu

Wei-Chen Chang

Tsung-Mu Lai

I-Lang Lin

A forming control method for a resistive random-access memory cell array is provided. While a forming action of the resistive random-access memory cell array is performed, a verification action is performed to judge whether the forming action on the resistive random-access memory cells has been successfully done. By properly changing a forming voltage or a pulse width, the forming actions on all of the resistive random-access memory cells of the resistive random-access memory cell array can be successfully done.

Growing community of inventors

Hsinchu County, Taiwan

Meng-Chiuan Wu