Taiwan Semiconductor Manufacturing Comp. Ltd.

National Taiwan University

Meng-Chin Lee

Chia-Chan Chen

Cheng-Yen Li

Chee-Wee Liu

Fang-Liang Lu

Chun-Ti Lu

A method is provided for light shielding a charge storage device of an image sensor pixel that includes a photosensitive device and the charge storage device and a dielectric layer covering the photosensitive device and the charge storage device. The method includes performing etching of the dielectric layer to define an undercut volume beneath the dielectric layer and an access opening through the dielectric layer to the undercut volume, and performing physical vapor deposition (PVD) of a light blocking material to both: fill the undercut volume with the light blocking material to form a light blocking layer covering the charge storage device, and fill the access opening with the light blocking material to form a light blocking plug. An image sensor pixel formed by such a process, and an image sensor comprising an array of image sensor pixels, are also disclosed.

Image sensor pixel and metal shielding of charge storage device of image sensor pixel formed by one step process

A method of forming a semiconductor device includes forming a doped region on a semiconductor substrate, in which the doped region comprises an impurity therein, and performing a laser anneal process to the doped region with a process gas containing a dopant gas, in which the dopant gas and the impurity comprise the same chemical element.

Laser anneal process

Growing community of inventors

Tainan, Taiwan

Meng-Chin Lee