Taiwan Semiconductor Manufacturing Comp. Ltd.

Meng-Chieh Wen

Huan-Just Lin

Han-Ting Lin

Sin-Yi Yang

Chen-Jung Wang

Jiann-Horng Lin

Hsing-Hsiang Wang

Kun-Yi Li

Yu-Feng Yin

An-Shen Chang

Lan-Hsin Chiang

Yin-Hao Wu

Lin-Ting Lin

A semiconductor structure and a method for forming a semiconductor structure are provided. A substrate having a cell region and a mark region is received. A dielectric layer is etched to expose a conductive line in the cell region and form a trench in the mark region. A conductive layer is formed over the cell region and in the trench. The conductive layer is etched to form a bottom electrode via in the cell region and a first mark layer in the trench.

Memory device and method for forming thereof

A method for forming a memory device structure is provided. The method includes providing a substrate, a first dielectric layer, a conductive via, a magnetic tunnel junction cell, a first etch stop layer, and a first spacer layer. The substrate has a first region and a second region, the first dielectric layer is over the substrate, the conductive via passes through the first dielectric layer over the first region. The method includes removing the first etch stop layer, which is not covered by the first spacer layer. The method includes removing the first dielectric layer, which is not covered by the first etch stop layer.

Memory device structure and method for forming the same

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Kaohsiung, Taiwan

Meng-Chieh Wen