International Business Machines Corporation

Melvin W Montgomery

Wayne Martin Moreau

William R Brunsvold

Christopher John Knors

Steve S Miura

Ratnam Sooriyakumaran

Robert David Allen

Gregory Michael Wallraff

Burton Jesse Carpenter

Harbans S Sachdev

Willard E Conley

William D Hinsberg, Iii

Kevin Michael Welsh

Logan L Simpson

Joseph LaTorre

Michael G McMaster

Randolph J Smith

Premlatha J Jagannathan

Dale M Crockatt

Robert J Tweig

Philip Chiu

Positive photoresist compositions and methods using the photoresist compositions for making submicron patterns in the production of semiconductor devices are disclosed. The photoresists contain sensitizers that are mixed naphthoquinonediazide 4- and 5- sulfonic acid esters of bis and tris(mono, di and trihydroxyphenyl) alkanes.

Fast diazoquinone positive resists comprising mixed esters of

A method of synthesizing a silicon-containing positive resist for use as a imaging layer in DUV, x-ray, or e-beam lithography is disclosed. The resist contains arylsilsesquioxane polymers with acid sensitive pendant groups as dissolution inhibitors and a photoacid generator.

Silicon containing positive resist for DUV lithography

Disclosed is a positive photoresist. The photoresist has as its polymeric component a substantially water and base insoluble, photolabile polymer. The photoresist further includes a photo acid generator that is capable of forming a strong acid. This photo acid generator may be a sulfonate ester derived from a N-hydroxyamide, or a N-hydroxyimide. Finally, the photoresist composition includes an appropriate photosensitizer.

Positive photoresist system for near-UV to visible imaging

Acid sensitized photoresists with enhanced photospeed are provided. The photoresist compositions include a polymer binder and/or a polymerizable compound and an acid sensitive group which enables patterning of the resist composition, and acid generating photoinitiator, and an hydroxy aromatic compound which enhances the speed of the resist composition under imaging radiation.

Speed enhancers for acid sensitized resists

Highly sensitive, highly absorbing deep ultraviolet and vacuum ultraviolet resists which comprise a novolak resin protected with an acid labile group and a photoinitiator which generates a strong acid upon exposure to deep ultraviolet or vacuum ultraviolet radiation. The exposed resists are reacted with organometallic compounds to form reactive ion etch resistant patterns.

Highly sensitive dry developable deep UV photoresist

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New Windsor, NY, United States of America

Melvin W Montgomery