Koninklijke Philips Corporation N.v.

Lumileds LLC

Philips Lumileds Lighting Company LLC

Lumileds Holding B.v.

Melvin Barker Mclaurin

John Edward Epler

Michael Jason Grundmann

Werner K Goetz

Nathan Fredrick Gardner

Michael David Camras

Sungsoo Yi

Aurelien Jean Francois David

Qi Ye

Nathan Frederick Gardner

Aurelien JF David

Michael R Krames

Methods and apparatus are described. An apparatus includes a hexagonal oxide substrate and a III-nitride semiconductor structure adjacent the hexagonal oxide substrate. The III-nitride semiconductor structure includes a light emitting layer between an n-type region and a p-type region. The hexagonal oxide substrate has an in-plane coefficient of thermal expansion (CTE) within 30% of a CTE of the III-nitride semiconductor structure.

Light emitting device with improved extraction efficiency

In a method according to embodiments of the invention, a III-nitride layer is grown on a growth substrate. The III-nitride layer is connected to a host substrate. The growth substrate is removed. The growth substrate is a non-III-nitride material. The growth substrate has an in-plane lattice constant a. The III-nitride layer has a bulk lattice constant a. In some embodiments, [(|a&#x2212;a|)/a]*100% is no more than 1%.

Method of forming a composite substrate

In embodiments of the invention, a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown on a substrate. The substrate is a non-III-nitride material. The substrate has an in-plane lattice constant a. At least one III-nitride layer in the semiconductor structure has a bulk lattice constant aand [(|a&#x2212;a|)/a]*100% is no more than 1%. A surface of the substrate opposite the surface on which the semiconductor structure is grown is textured.

In a method according to embodiments of the invention, a III-nitride layer is grown on a growth substrate. The III-nitride layer is connected to a host substrate. The growth substrate is removed. The growth substrate is a non-III-nitride material. The growth substrate has an in-plane lattice constant a substrate. The III-nitride layer has a bulk lattice constant a layer. In some embodiments, [(|substrate&#x2212;a layer|)/substrate]*100% is no more than 1%.

In embodiments of the invention, a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown on a substrate. The substrate is a non-III-nitride material. The substrate has an in-plane lattice constant a. At least one III-nitride layer in the semiconductor structure has a bulk lattice constant aand [(|a&#x2212;a|)/a]100% is no more than 1%. A surface of the substrate opposite the surface on which the semiconductor structure is grown is textured.

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San Jose, CA, United States of America

Melvin Barker Mclaurin