Nxp USA, Inc.

Melissa Picard

Colby Greg Rampley

Jeffrey Lynn Weibrecht

Elijah Blue Foster

Jeremy Kenneth Kramer

A device wafer is provided that includes a substrate having major and minor surfaces, and a plurality of active devices located at the major surface. A eutectic alloy composition having a first thickness is formed at the minor surface of the substrate. The eutectic alloy composition is partially removed from the minor surface of the substrate such that a second thickness of the eutectic alloy composition remains on the minor surface, the second thickness being less than the first thickness. A bonding layer is deposited over the eutectic alloy composition. The bonding layer is utilized for joining semiconductor components of the device wafer to secondary structures.

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Gilbert, AZ, United States of America

Melissa Picard