Asml Netherlands B.v.

Lam Research Corporation

Melisa Luca

Johannes Catharinus Hubertus Mulkens

Richard Stephan Wise

Girish Anant Dixit

Michael Kubis

Marinus Jochemsen

Nader Shamma

Ekaterina Mikhailovna Viatkina

Liesbeth Reijnen

A method, and associated apparatus and computer program, to determine corrections for a parameter of interest, such as critical dimension, of a patterning process. The method includes determining an exposure control correction for an exposure control parameter and, optionally, determining a process control correction for a process control parameter, based upon a measurement of the parameter of interest of a structure, and an exposure control relationship and a process control relationship. The exposure control relationship describes the dependence of the parameter of interest on the exposure control parameter and the process control relationship describes the dependence of the parameter of interest on the process control parameter. The exposure control correction and process control correction may be co-optimized to minimize variation of the parameter of interest of subsequent exposed and processed structures relative to a target parameter of interest.

Method of controlling a patterning process, lithographic apparatus, metrology apparatus lithographic cell and associated computer program

Growing community of inventors

Breda, Netherlands

Melisa Luca