Air Products and Chemicals, Inc.

Melanie Anne Boze

David A Roberts

John Anthony Thomas Norman

Morteza Farnia

In the present invention, a metal halide film is grown which is then reduced to the metal film rather than growing the metal film directly on the substrate surface. In certain embodiments, a metal halide film is grown from at least two precursors: a halogen-containing precursor and a metal-containing precursor. The metal halide film is then exposed to a reducing agent to form the metal film. In certain preferred embodiments, the metal halide film is exposed to the reducing agent prior to the completion of the growing step.

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Encinitas, CA, United States of America

Melanie Anne Boze