Chinese Academy of Sciences

Jiangxi Yuhongjin Material Technology Co., Ltd.

Meixin Feng

Yu Chen Zhou

Hui Calvin Yang

Hongwei Gao

Qian Sun

Yaozong Zhong

Jianxun Liu

Xiaoning Zhan

Shuai Su

Hui Yang

Yu Zhou

Gao Hongwei

The present application discloses a semiconductor device and a manufacturing method thereof. The manufacturing method comprises manufacturing a semiconductor material layer comprising two laminated semiconductor layers between which an etching transition layer is provided; and etching a part of one of semiconductor layers located in a selected region until etching is stopped after reaching or entering the etching transition layer, subjecting the part of the etching transition layer located in the selected region to thermal decomposition through thermal treatment to be completely removed, and realizing termination of thermal decomposition on another semiconductor layer, so as to precisely form a trench structure in the semiconductor material layer. The present application can achieve precise control of the depth of the trench etched on the semiconductor material to thoroughly avoid surface damage caused by etching and ensure that the electrical characteristic of the device is not affected by fluctuation of the etching process.

Semiconductor device and manufacturing method thereof employing an etching transition layer

A group III nitride enhancement-mode HEMT based on a composite barrier layer structure and a manufacturing method thereof are provided. The HEMT includes first and second semiconductors respectively serving as a channel layer and a barrier layer, a third semiconductor serving as a p-type layer, a source, a drain and a gate, wherein a recessed structure is formed in the region of the barrier layer corresponding to the gate, which is matched with the third semiconductor and the gate to form a p-type gate, and the second semiconductor includes first and second structure layers successively arranged on the first semiconductor; relative to the selected etching reagent, the first structure layer has higher etching resistance than the second structure layer.

Group III nitride enhancement-mode HEMT based on composite barrier layer structure and manufacturing method thereof

The present application discloses a nitride semiconductor light-emitting device and a manufacture method thereof. The nitride semiconductor light-emitting device includes an epitaxial structure, wherein the epitaxial structure has a first face and a second face opposite to the first face, the first face is a (000) nitrogen face and located at the n type side of the epitaxial structure, the second face is located at the p type side of the epitaxial structure, the n type side of the epitaxial structure is electrically contacted with an n type electrode, the p type side is electrically contacted with a p type electrode, and a ridge waveguide structure is formed on the first face. The nitride semiconductor light-emitting device, especially a III-V nitride semiconductor laser or a super-radiance light-emitting diode, of the present application, has the advantages of low resistance, low internal loss, small threshold current, small thermal resistance and good stability and reliability and the like, and meanwhile the preparation process is simple and is easily implemented.

Nitride semiconductor light-emitting device and manufacture method therefore

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Suzhou, China

Meixin Feng