Technion Research & Development Foundation Ltd

Lambda Crossing, Ltd.

Leland Stanford Junior University

Lambda Corssing Ltd.

Meir Orenstein

Moti Margalit

Alex Hayat

Gilad Rosenblatt

Shanhui Fan

Bo Zhao

Amir Nevet

Uri Dinnar

Nimrod Moiseyev

Sid Assawaworrarit

Parthiban Santhanam

Boris Simkhovich

Saar Golan

Ilya Vorobeichik

Anna Kodanev

Pavel Ginzburg

Alex Lahav

Grisha Spektor

Michael Yasin

David Elata

In certain examples, methods and semiconductor structures are directed to an apparatus including a photon emitter such as an LED which operates over an emission wavelength range and a photo-voltaic device arranged relative to the photon emitter to provide index-matched optical coupling between the photo-voltaic device and the photon emitter for an emission wavelength range of the photon emitter.

Apparatuses and methods involving DC voltage conversion using photonic transformers

A monitoring system and method are presented for use in monitoring a target. The monitoring system comprises: an input utility for receiving input data comprising measured data indicative of optical response of the target measured under predetermined conditions and comprising phase data indicative of a two-dimensional profile of full phase of the optical response of the target in a predetermined two-dimensional parametric space including a two-dimensional range in which said target exhibits phase singularity; an analyzer module for processing said measured data and extracting at least one phase singularity signature of the target characterizing the target status, the phase singularity signature being formed by a number N of phase singularity points, each corresponding to a condition that the physical phase continuously accumulates a nonzero integer multiple m of 2&#x3c0; around said point.

System and method for monitoring status of target

Imaging apparatus () includes an image sensor (), configured to capture an image of radiation at a target wavelength that is incident on a front surface of the image sensor. A metasurface () having a negative permittivity and a negative permeability at the target wavelength is fixed to the front surface of the image sensor.

Near-field imaging devices

A plasmonic lens is presented comprising a surface for interaction with an input electromagnetic field, wherein this surface has a pattern comprising an arrangement of a plurality of elongated spaced-apart features of a predetermined geometry arranged in a spaced-apart relationship along at least one segment of a spiral curve, each of the pattern features defining an elongated interface for creation of surface waves in response to the interaction with the incident electromagnetic field, such that the pattern provides linear-polarization-independent plasmonic focusing and large area, high contrast, circular polarization dichroic plasmonic focusing.

Plasmonic lens having a surface pattern providing linear-polarization-independent plasmonic focusing and circular polarization dependent plasmonic focusing

An apparatus includes an optical ring resonator, first and second optical couplers, and control circuitry. The first optical coupler is configured to modulate an input optical signal traversing an optical waveguide, by tuning cross-coupling of energy between the optical waveguide and the ring resonator with a first variable coupling coefficient. The second optical coupler is configured to tune cross-coupling of energy between the ring resonator and an auxiliary optical signal, different from the input optical signal, with a second variable coupling coefficient. The control circuitry is configured to modulate the first coupling coefficient with a first control signal so as to modulate the input optical signal, and to modulate the second coupling coefficient with a second control signal, so as to retain a constant electrical-field complex envelope in the ring resonator.

Charge-discharge electro-optical microring modulator

A semiconductor device which produces at least 1 W/m2 two photon emission power per area, when operating at one or more temperatures greater than 20 K.

Light source based on simultaneous two-photon emission

A system for measuring one or more characteristics of light of a photon energy Efrom a light source, that can be determined from measuring three-photon absorption events, the system comprising:

System and method for analyzing light by three-photon counting

The present invention introduces a new technique allowing the fabrication of high-aspect ratio nanoscale semiconductor structures and local device modifications using FIB technology. The unwanted semiconductor sputtering in the beam tail region prevented by a thin slow-sputter-rate layer which responds much slower and mostly to the high-intensity ion beam center, thus acting as a saturated absorber funnel-like mask for the semiconductor. The protective layer can be deposited locally using FIB, thus enabling this technique for local device modifications, which is impossible using existing technology. Furthermore, such protective layers allow much higher resolution and nanoscale milling can be achieved with very high aspect ratios, e.g. Ti layer results in aspect ratio higher than 10 versus bare semiconductor milling ratio of about 3.

Focused ion beam deep nano-patterning apparatus and method

A wavelength selective filter device is presented suitable for use as a part of a laser cavity for processing light output of a gain section of the laser cavity. The filter structure comprises a resonator structure including at least one closed-loop resonator; and defines an optical coupler structure for coupling light from an input/output of the gain section to propagate through said resonator structure, and a light reflector structure for reflecting light filtered by said resonator structure to propagate through said resonator structure to said input/output of the gain section. The filter structure is configured so as to define two optical paths of substantially the same lengths for light propagation in the resonator structure from and to the coupler structure.

Optical filtering device and method

A tunable semiconductor laser device is presented. The device comprises a laser structure formed by at least two waveguides and an active region located within at least a segment of one of the waveguides; and comprises a tunable spectral filter optically coupled to the laser structure. The tunable spectral filter includes at least two filtering elements, at least one of them being a microring cavity.

Tunable laser using microring resonator

A multisegment laser diode structure is presented in the form of two spaced-apart linear waveguide segments and two spaced-apart ring-like waveguide segments, arranged such that each of the ring-like segments is optically coupled to each of the linear waveguide segments. At least one of the waveguide segments includes an active lasing material. The waveguide segments are thus arranged such that four separate electrical contacts can be provided to four waveguide segments, respectively, thereby enabling separate driving of each of the waveguide segments.

Multisegment integrated laser and a method for fabrication thereof

An optical device for use in data communication technique is presented. The device comprises a combination of two spaced-apart waveguides and at least two spaced-apart resonator-cavity loops. The resonator-cavity loops are accommodated between the two waveguides and connected to each other through sections of the waveguides in such a manner that the resonator-cavity loops and the waveguide sections create a closed loop compound resonator for storing optical energy of a predetermined frequency range. A control means is used for controlling physical characteristics of the compound resonator to adjust its optical storage characteristics.

Integrated optical device for data communication

A method of fabricating an integrated optical device and such a device, comprising a structure including at least one waveguiding element are presented. A basic structure is formed containing a substrate material carrying a buffer material layer coated with a core material layer of a higher refraction index as compared to that of the buffer layer. The at least one waveguiding element is defined in a guiding layer on top of the basic structure. The guiding layer is made of a material with a refractive index higher than the refractive index of the buffer layer and the core layer, and is chosen so as to minimize a height of the at least one waveguiding element and to provide effective guiding of light in the core layer. A cladding layer is formed on top of the so-obtained structure, wherein a height difference between the cladding layer region above the waveguiding element and the cladding layer region outside the waveguiding element is substantially small resulting in a desired flatness of the top cladding layer to allow direct formation of a further waveguide structure thereon and prevent significant perturbations in light propagation within the further waveguide structure.

Multilayer integrated optical device and a method of fabrication thereof

An optical coupler, for coupling two waveguides, and an optical switch based on the optical coupler. The indices of refraction of parallel sections of the two waveguides are reversibly perturbed periodically in space to couple low order modes in the two waveguides via a high order mode common to the two waveguides. The waveguides are thus couples with a beat length that may be five or more orders of magnitude shorter than it would be without the periodic perturbations.

Growing community of inventors

Haifa, Israel

Meir Orenstein