Versum Materials US, LLC

Air Products and Chemicals, Inc.

Meiliang Wang

Xinjian Lei

Manchao Xiao

Matthew R MacDonald

Haripin Chandra

Mark Leonard O'Neill

Richard Ho

Bing Han

Ronald Martin Pearlstein

Raymond Nicholas Vrtis

Madhukar Bhaskara Rao

Anupama Mallikarjunan

Daniel P Spence

Robert Gordon Ridgeway

Andrew David Johnson

Steven Gerard Mayorga

Neil Osterwalder

Matthew R Macdonald

Steve Gerard Mayorga

Atomic layer deposition (ALD) process formation of silicon oxide with temperature >600° C. is disclosed. Silicon precursors used have a formula of: I.RRSi(NRR)wherein R, R, and Rare each independently selected from a linear or branched Cto Calkyl group, and a Cto Caryl group; Ris selected from hydrogen, a linear or branched Cto Calkyl group, and a Cto Caryl group, a Cto Calkylsilyl group; wherein Rand Rare linked to form a cyclic ring structure or Rand Rare not linked to form a cyclic ring structure; m is 0 to 2; n is 1 to 3; and m+n=3.

Composition for high temperature atomic layer deposition of high quality silicon oxide thin films

Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

Organoaminosilane precursors and methods for depositing films comprising same

Amino-functionalized linear and cyclic oligosiloxanes, which have at least two silicon and two oxygen atoms as well as an organoamino group and methods for making the oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized linear and cyclic oligosiloxanes are also disclosed.

Organoamino-functionalized linear and cyclic oligosiloxanes for deposition of silicon-containing films

A method for producing an alkenyl or alkynyl-containing organosilicon precursor composition, the method comprising the steps of distilling at least once a composition comprising an alkenyl or alkynyl-containing organosilicon compound having the formula RSiRwherein R is selected a linear or branched Cto Calkenyl group, a linear or branched Cto Calkynyl group; Ris selected from hydrogen, a linear or branched Cto Calkyl group, and a Cto Ccyclic alkyl group; and n is a number selected from 1 to 4, wherein a distilled alkenyl or alkynyl-containing organosilicon precursor composition is produced after distilling; and packaging the distilled alkenyl or alkynyl-containing organosilicon precursor composition in a container, wherein the container permits transmission into the container of no more than 10% of ultraviolet and visible light having a wavelength of between 290 nm to 450 nm.

Stable alkenyl or alkynyl-containing organosilicon precursor compositions

Described herein are compositions and methods for forming silicon and oxygen containing films. In one aspect, the film is deposited from at least one precursor, wherein the at least one precursor selected from the group consisting of Formula C: as defined herein.

Trisilylamine derivatives as precursors for high growth rate silicon-containing films

A method for depositing a film comprising silicon and oxygen onto a substrate includes (a) providing a substrate in a reactor; (b) introducing into the reactor at least one silicon precursor compound selected from the group consisting of Formulae A, B, and C as described herein, (c) purging the reactor with a purge gas; (d) introducing at least one of an oxygen-containing source and a nitrogen-containing source into the reactor; and (e) purging the reactor with the purge gas, wherein the steps b through e are repeated until a desired thickness of resulting silicon-containing film is deposited; and (f) treating the resulting silicon-containing film with RSi(NRR)wherein Rare the same as aforementioned, preferably methyl or ethyl; and x=1, 2, or 3; and wherein the method is conducted at one or more temperatures ranging from about 20&#xb0; C. to 300&#xb0; C.

Deposition of carbon doped silicon oxide

Described herein are low temperature processed high quality silicon containing films. Also disclosed are methods of forming silicon containing films at low temperatures. In one aspect, there are provided silicon-containing film having a thickness of about 2 nm to about 200 nm and a density of about 2.2 g/cmor greater wherein the silicon-containing thin film is deposited by a deposition process selected from a group consisting of chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), cyclic chemical vapor deposition (CCVD), plasma enhanced cyclic chemical vapor deposition (PECCVD, atomic layer deposition (ALD), and plasma enhanced atomic layer deposition (PEALD), and the vapor deposition is conducted at one or more temperatures ranging from about 25&#xb0; C. to about 400&#xb0; C. using an alkylsilane precursor selected from the group consisting of diethylsilane, triethylsilane, and combinations thereof.

Compositions and methods for making silicon containing films

Organoamino-polysiloxanes, which have at least three silicon atoms, oxygen atoms, as well as an organoamino group, and methods for making the organoamino-polysiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-polysiloxanes are also disclosed.

Organoamino-polysiloxanes for deposition of silicon-containing films

Described herein are compositions and methods for forming silicon oxide films. In one aspect, the film is deposited from at least one silicon precursor compound, wherein the at least one silicon precursor compound is selected from the following Formulae A and B: as defined herein.

Compositions and methods for the deposition of silicon oxide films

Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below:  In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350&#xb0; C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

Organoamino-functionalized cyclic oligosiloxanes, which have at least two silicon and two oxygen atoms as well as an organoamino group and methods for making the organoamino-functionalized cyclic oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized cyclic oligosiloxanes are also disclosed.

Organoamino-functionalized cyclic oligosiloxanes for deposition of silicon-containing films

Described herein are compositions and methods for forming silicon and oxygen containing films. In one aspect, the film is deposited from at least one precursor, wherein the at least one precursor selected from the group consisting of Formulae A and B: wherein R, R, and Rare as defined herein.

Atomic layer deposition (ALD) process formation of silicon oxide with temperature&#x3e;500&#xb0; C. is disclosed.

Growing community of inventors

San Marcos, CA, United States of America

Meiliang Wang