Lockheed Martin Corporation

Nanyang Technological University

Globalfoundries Singapore Pte. Ltd.

Mei Zhen Ng

Alfred A Zinn

Chee Lip Gan

Byung Hoon Lee

Chim Seng Seet

Kazutaka Yamane

Ju Dy Lim

A memory device may be provided, including a first planar electrode, a second planar electrode, and a switching element arranged between the first planar electrode and the second planar electrode to where a first side of the switching element is arranged over the first planar electrode and where a second side of the switching element is arranged under the second planar electrode. The switching element is thicker at the first side than the second side, and the switching element is configured to provide a conductive filament formation region.

Memory device having a switching element thicker at a first side than at a second side and method of forming the same

According to embodiments of the present invention, a conductive paste is provided. The conductive paste has a composition including a plurality of conductive nanoparticles and a plurality of conductive nanowires, wherein a weight ratio of the plurality of conductive nanoparticles to the plurality of conductive nanowires is between about 10:1 and about 50:1. According to further embodiments of the present invention, a method for forming an interconnection and an electrical device are also provided.

Conductive paste, method for forming an interconnection and electrical device

Growing community of inventors

Singapore, Singapore

Mei Zhen Ng