Kla Tencor Corporation

Luxtron Corporation

Sensarray Corporation

Kla-tencor Technologies Corporation

Kla Corporation

Mei H Sun

Earl M Jensen

Wayne Glenn Renken

Kenneth A Wickersheim

Farhat A Quli

Kevin O'Brien

Stanley O Heinemann

Vaibhaw Vishal

Roy Gordon

Andrew Nguyen

Robert E Melen

Tony DiBiase

Mark Wiltse

James H Kim

Ran Liu

Brian Paquette

David L Vecht

Stephen Sharratt

Aron Abramowski Mason

Herbert E Litvak

Lynn Karl Wiese

Jing Zhou

Huey M Tzeng

Paul Arleo

Daniel E Glenn

Jing G Zhou

Kristopher K Hearn

Richard Schwaninger

Arwa Ginwalla

Pascal Champagne

Peter Michael Noel Vandenabeele

Stanley O Hinemann

Vasudev Venkatesan

Paul Miller

Lin Jun Zhou

Zachary Reid

Frank J Hausman

An apparatus includes an instrumented substrate apparatus, a substrate assembly including a bottom and top substrate mechanically coupled, an electronic assembly, a nested enclosure assembly including an outer and inner enclosure wherein the outer enclosure encloses the inner enclosure and the inner enclosure encloses the electronic assembly. An insulating medium between the inner and outer enclosure and a sensor assembly communicatively coupled to the electronic assembly including one or more sensors disposed at one or more locations within the substrate assembly wherein the electronic assembly is configured to receive one or more measurement parameters from the one or more sensors.

Encapsulated instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications

An apparatus includes a substrate, a nested enclosure assembly including an outer enclosure and an inner enclosure, wherein the outer enclosure encloses the inner enclosure and the inner enclosure encloses at least the electronic assembly. An insulating medium is disposed within a cavity between the outer surface of the inner enclosure and the inner surface of the outer enclosure and the system includes a sensor assembly communicatively coupled to the electronic assembly. The sensor assembly includes one or more sensors that are configured to acquire one or more measurement parameters at one or more locations of the substrate. The electronic assembly is configured to receive the one or more measurement parameters from the one or more sensors.

Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications

A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. The collector portion is the top surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s).

Process condition sensing device and method for plasma chamber

A sensor wafer may be configured for in-situ measurements of parameters during an etch process. The sensor wafer may include a substrate, a cover, and one or more components positioned between the substrate and the cover. An etch-resistant coating is formed on one or more surfaces of the cover and/or substrate. The coating is configured to resist etch processes that etch the cover and/or substrate for a longer period than standard thin film materials of the same or greater thickness than the protective coating.

Etch-resistant coating on sensor wafers for in-situ measurement

A measurement wafer device for measuring radiation intensity and temperature includes a wafer assembly including one or more cavities. The measurement wafer device further includes a detector assembly. The detector assembly includes one or more light sensors. The detector assembly is further configured to perform a direct or indirect measurement of the intensity of ultraviolet light incident on a surface of the wafer assembly.

Method and system for measuring radiation and temperature exposure of wafers along a fabrication process line

A sensor apparatus has a substrate and a spectrally selective detection system, and a cover. The spectrally sensitive detection system is sandwiched between the substrate and the cover. The spectrally selective detection system includes a generally laminar array of wavelength selectors optically coupled to a corresponding array of optical detectors located within the substrate. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Wafer level spectrometer

A measurement wafer device for measuring radiation intensity and temperature includes a wafer assembly including one or more cavities. The measurement wafer device further includes a detector assembly. The detector assembly is disposed within the one or more cavities of the wafer assembly. The detector assembly includes one or more light sensors. The detector assembly is further configured to perform a direct or indirect measurement of the intensity of ultraviolet light incident on a surface of the wafer assembly. The detector assembly is further configured to determine a temperature of one or more portions of the wafer assembly based on one or more characteristics of the one or more light sensors.

A heat flux sensor equipped measurement wafer includes a substrate, a cover thermally coupled to a portion of the substrate, a sensor cavity formed between the substrate and the cover, a thermal barrier disposed within at least a portion of the sensor cavity, a bottom temperature sensor thermally coupled to the substrate and insulated from the cover by a portion of the thermal barrier and a top temperature sensor thermally coupled to the cover and insulated from the substrate by an additional portion of the thermal barrier, wherein a temperature difference between the bottom temperature sensor and the top temperature sensor is related to a heat flux passing through the substrate and cover proximate to the sensor cavity.

Method and system for measuring heat flux

Aspects of the present disclosure describe an attachment device for mounting a module to a substrate comprises a module leg with two ends and a module foot. One end of the module leg is configured to be attached to a bottom surface of the module and the other end of the module leg is configured to be attached to the module foot. At least a portion of the module foot is configured to be attached to the substrate. Also a portion of a surface area of the module foot is configured to be exposed outside of an area covered by the module. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Methods of attaching a module on wafer substrate

A measurement unit comprising a light source and a photodetector may be formed in a cavity in a substrate. The light source produces light that impinges a material layer and is reflected back to the photodetector. Through methods such as interferometry and ellipsometry, the thickness of the material layer may be calculated from the light intensity data measured by the photodetector. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Film thickness monitor

Aspects of the present disclosure disclose a component module in a process condition measuring device comprises a support for supporting a component, one or more legs configured to suspend the support in a spaced-apart relationship with respect to a substrate. An electrically conductive or low-resistivity semiconductor enclosure is configured to enclose the component, the support and the legs between the substrate and the enclosure. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

High temperature sensor wafer for in-situ measurements in active plasma

A sensor apparatus for measuring characteristics of optical radiation has a substrate and a low profile spectrally selective detection system located within the substrate at one or more spatially separated locations. The spectrally selective detection system includes a generally laminar array of wavelength selectors optically coupled to a corresponding array of optical detectors. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

A process condition measuring device (PCMD) may include first and second substrate components. One or more temperature sensors are embedded within each substrate component. The first and second substrate components are sandwiched together such that each temperature sensor in the second substrate component is aligned in tandem with a corresponding temperature sensor located in the first substrate component. Alternatively first and second temperature sensors may be positioned in parallel in the same substrate. Temperature differences may be measured between pairs of corresponding temperature sensors when the PCMD is subjected to process conditions in a workpiece processing tool. Process conditions in the tool may be calculated from the temperature differences.

Process condition measuring device (PCMD) and method for measuring process conditions in a workpiece processing tool configured to process production workpieces

A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s).

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Los Altos, CA, United States of America

Mei H Sun