Infineon Technologies Ag

Mei Fen Hiew

Thai Kee Gan

Mohd Kahar Bajuri

Joel Feliciano Del Rosario

Mohd Afiz Hashim

Ralf Otremba

Ivan Nikitin

Thomas Stoek

Bernd Schmoelzer

Sanjay Kumar Murugan

Ke Yan Tean

Edward Fürgut

Michael Niendorf

Oliver Markus Kreiter

Elvis Keli

Angel Enverga

Kean Ming Koe

Ludwig Busch

Tian See Hoe

Bernhard Stiller

Joon Shyan Tan

Li Fong Chong

Yee Beng Daryl Yeow

A semiconductor package is disclosed. In one example, the semiconductor package includes a package body. A first diepad is at least partially uncovered by the package body at the first main surface. A second diepad is at least partially uncovered by the package body at the first main surface. A first semiconductor chip is arranged on the first diepad. A second semiconductor chip is arranged on the second diepad. The semiconductor package further includes at least one lead protruding out of the package body at the side surface. A first groove is formed in the first main surface, wherein the first groove is arranged between the first diepad and the second diepad, and a second groove is formed in the first main surface, wherein the second groove is arranged between the at least one lead and at least one of the first diepad and the second diepad.

Semiconductor packages including a package body with grooves formed therein

A semiconductor package includes: a semiconductor die attached to a leadframe and having a first bond pad at a side of the semiconductor die facing away from the leadframe; a metal clip having a first bonding region attached to the first bond pad of the semiconductor die by a plurality of first wire bonds which extend through a plurality of first openings in the first bonding region of the metal clip, the plurality of first wire bonds forming a joint between the metal clip and the first bond pad of the semiconductor die; and a joint between the plurality of first wire bonds and the metal clip at a side of the metal clip facing away from the semiconductor die. Additional semiconductor package embodiments and related methods of manufacture are also described.

Semiconductor package with wire bond joints

A method of attaching a metal clip to a semiconductor die includes: aligning a first bonding region of the metal clip with a first bond pad of the semiconductor die; and while the first bonding region of the metal clip is aligned with the first bond pad of the semiconductor die, forming a plurality of first wire bonds to the first bond pad of the semiconductor die through a plurality of openings in the first bonding region of the metal clip, the plurality of first wire bonds forming a joint between the metal clip and the first bond pad of the semiconductor die. Additional methods and related semiconductor packages produced from such methods are also described.

Semiconductor package with wire bond joints and related methods of manufacturing

A semiconductor module includes: a dual-gauge leadframe having thicker and thinner parts, part of the thinner part forming a high voltage lead; a semiconductor die attached to the thicker part; and a molding compound (MC) encapsulating the die. The thicker leadframe part is disposed at a bottom side of the MC. A side face of the MC has a stepped region between the high voltage lead and thicker leadframe part. A first generally vertical part of the stepped region extends from the high voltage lead to the generally horizontal part, a generally horizontal part of the stepped region extends to the second generally vertical part, and a second generally vertical part of the stepped region extends to the bottom side of the MC. A linear dimension of the generally horizontal part as measured from the first generally vertical part to the second generally vertical part is at least 4.5 mm.

Molded semiconductor module having a mold step for increasing creepage distance

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Melaka, Malaysia

Mei Fen Hiew