Epistar Corporation

Mei-Chun Liu

Chia-Liang Hsu

Shih-Chang Lee

Wen-Luh Liao

Shiuan-Leh Lin

Yi-Chieh Lin

Yung-Fu Chang

Han-Min Wu

Yi Hsiao

Hong-Chi Shih

Shih-I Chen

Chun-Yi Wu

Chao-Shun Huang

Kuang-Ping Chao

Chu-Jih Su

Chia-Ling Hsu

This disclosure discloses an optical sensing device. The device includes a carrier body having a topmost surface; a first light-emitting device disposed on the carrier body and having a light-emitting surface; and a light-receiving device comprising a group III-V semiconductor material disposed on the carrier body and having a light-receiving surface. The light-emitting surface is separated from the topmost surface by first distant H, the light-receiving surface is separated from the topmost surface by a second distance H, and His different from H

Optical sensing device and optical sensing system thereof comprising light emitting device and light receiving device completely sandwiched by the topmost surface and bottommost surface of a carrier body with different vertically separated distances

A photo-detecting device includes a substrate, a first semiconductor layer, a light-absorbing layer, a second semiconductor layer, a semiconductor contact layer, an insulating layer, and an electrode structure. The second semiconductor layer includes a first region and a second region. The semiconductor contact layer is on the first region. The insulating layer covers the semiconductor contact layer, the first region, and the second region. The electrode structure covers the semiconductor contact layer, the insulating layer, the first region, and the second region.

Semiconductor photo-detecting device

This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is &#x2265;13.

Optical sensing device and optical sensing system thereof comprising a light receiving device capable of receiving a first received wavelength having a largest external quantum efficiency

Light-emitting diode array

Light-emitting diode

Growing community of inventors

Hsinchu, Taiwan

Mei-Chun Liu