United Microelectronics Corp.

Mei-Chen Chen

En-Chiuan Liou

Yi-Jing Wang

Ssu-I Fu

Li-Wei Feng

Shih-Hung Tsai

Chih-Kai Hsu

Yu-Hsiang Hung

Jyh-Shyang Jenq

Chia-Hung Lin

Chao-Hung Lin

An-Chi Liu

Shih-Fang Hong

Chun-Chi Yu

Hon-Huei Liu

Chia-Hsun Tseng

Chih-Wei Wu

Han-Lin Zeng

Yu-Ying Huang

Jen-Hsiu Li

Ya-Ling Chen

Chi-Ming Huang

The present invention provides an overlay target. The overlay target includes a plurality of first pattern blocks and a plurality of second pattern blocks. The first pattern blocks and the second patterns blocks are arranged in array by being separated by at least one first gaps stretching along a first direction and at least one second gaps stretching along a second direction. Each first pattern block is composed of a plurality of first stripe patterns stretching along a third direction, and each second pattern block is composed of a plurality of second stripe patterns stretching along a fourth direction. The first direction is orthogonal to the second direction, the third direction and the fourth direction are 45 degrees relative to the first direction.

Overlay target for optically measuring overlay alignment of layers formed on semiconductor wafer

A method of forming a semiconductor structure includes following steps. First of all, a patterned hard mask layer having a plurality of mandrel patterns is provided. Next, a plurality of first mandrels is formed on a substrate through the patterned hard mask. Following these, at least one sidewall image transferring (SIT) process is performed. Finally, a plurality of fins is formed in the substrate, wherein each of the fins has a predetermined critical dimension (CD), and each of the mandrel patterns has a CD being 5-8 times greater than the predetermined CD.

Method of forming a semiconductor structure

In this disclosure, a mark segmentation method and a method for manufacturing a semiconductor structure applying the same are provided. The mark segmentation method comprises the following steps. First, a plurality of segments having a width Wand separated from each other by a space Sformed on a substrate are identified by a processor. Thereafter, a plurality of marks are set over the segments by the processor. This step comprises: (1) adjusting a width Wof each one of the marks being equal to m(W+S)+Wor m(W+S)+Sby the processor, wherein m is an integer; and (2) adjusting a space Sof adjacent two of the marks by the processor such that WS=n(W+S), wherein n is an integer.

Mark segmentation method and method for manufacturing a semiconductor structure applying the same

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Tainan, Taiwan

Mei-Chen Chen