Applied Materials, Inc.

Mehmet Tugrul Samir

Shu-Kwan Danny Lau

Paul Brillhart

Joseph Michael Ranish

Dmitry Lubomirsky

Satheesh Kuppurao

Dongqing Yang

David K Carlson

Balasubramanian Ramachandran

Anzhong Chang

Swaminathan T Srinivasan

Jose Antonio Marin

Soonam Park

Surajit Kumar

Peter Hillman

Martin Yue Choy

Lala Zhu

Errol Antonio C Sanchez

Nyi O Myo

Anh Ngoc Nguyen

Richard Omar Collins

Masato Ishii

Steve Aboagye

Jeffrey A Tobin

Aaron Jacob Miller

Vijay D Parkhe

Zhiyuan Ye

Schubert S Chu

Kartik Bhupendra Shah

Xuebin Li

Zhepeng Cong

Oleg V Serebryanov

Kailash Kiran Patalay

Kenric T Choi

Zuoming Zhu

Dongming Iu

Marcel E Josephson

Dennis L Demars

Herman Diniz

Nikolai Nikolaevich Kalnin

Emre Cuvalci

Justin Wang

Paneendra Prakash Bhat

Onkara Swamy Kora Siddaramaiah

Kirby H Floyd

Implementations described herein provide a substrate support assembly which enables temperature uniformity across a workpiece surface. In one embodiment, a substrate support assembly is provided that includes a body. The body made from ceramic. The body having a workpiece support surface and a mounting surface. The workpiece support surface and the bonding chuck body surface having a flatness of less than 10 microns. A first heater is disposed on the bottom surface outside the body. A bonding layer is disposed over the first heater, wherein the bonding layer is electrically insulating and a cooling base having a body made from a metal. The cooling body having an upper cooling body surface and a lower cooling body surface wherein the upper cooling body surface is less than about 10 microns flat.

Extreme uniformity heated substrate support assembly

Exemplary support assemblies may include a top puck and a backing plate coupled with the top puck. The support assemblies may include a cooling plate coupled with the backing plate. The support assemblies may include a heater coupled between the cooling plate and the backing plate. The support assemblies may also include a back plate coupled with the backing plate about an exterior of the backing plate. The back plate may at least partially define a volume, and the heater and the cooling plate may be housed within the volume.

Multi-zone semiconductor substrate supports

Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include a mixing manifold coupled between the remote plasma unit and the processing chamber. The mixing manifold may be characterized by a first end and a second end opposite the first end, and may be coupled with the processing chamber at the second end. The mixing manifold may define a central channel through the mixing manifold, and may define a port along an exterior of the mixing manifold. The port may be fluidly coupled with a first trench defined within the first end of the mixing manifold. The first trench may be characterized by an inner radius at a first inner sidewall and an outer radius, and the first trench may provide fluid access to the central channel through the first inner sidewall.

Semiconductor processing chamber multistage mixing apparatus

Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define a central channel through the adapter. The adapter may define an exit from a second channel at the second end, and the adapter may define an exit from a third channel at the second end. The central channel, the second channel, and the third channel may each be fluidly isolated from one another within the adapter.

Semiconductor processing chamber for multiple precursor flow

Embodiments disclosed herein describe a liner assembly including a plurality of individually separated gas passages. The liner assembly provides control of flow parameters, such as velocity, density, direction and spatial location, across a substrate being processed. The processing gas across the substrate being processed may be specially tailored for individual processes with a liner assembly according to the present embodiments.

Liner for epi chamber

Semiconductor processing chamber multistage mixing apparatus and methods

Embodiments of the present disclosure provide a processing chamber with a top, a bottom, and a sidewall coupled together to define an enclosure, a gas distributor around the sidewall, a substrate support disposed in the enclosure, the substrate support having a central opening and a plurality of substrate locations distributed around the central opening, a pumping port below the substrate support, and an energy source coupled to the top or the bottom. The energy source may be a radiant source, a thermal source, a UV source, or a plasma source. The substrate support may be rotated using a magnetic rotator and an air bearing. The gas distributor may have a plurality of passages distributed around a circumference of the gas distributor.

Processing chamber

Embodiments described herein generally relate to a susceptor support for supporting a susceptor in a deposition process. The susceptor support includes a shaft, a plate with a first major surface coupled to the shaft, and a support element extending from a second major surface of the plate. The plate may be made of a material that is optically transparent to the radiation energy from a plurality of energy sources disposed below the plate. The plate may have a thickness that is small enough to minimize radiation transmission loss and large enough to be thermally and mechanically stable to support the susceptor during processing. The thickness of the plate may range from about 2 mm to about 20 mm.

Susceptor support

Embodiments disclosed herein generally relate to a gas distribution assembly for providing improved uniform distribution of processing gases into a semiconductor processing chamber. The gas distribution assembly includes a gas distribution plate, a blocker plate, and a dual zone showerhead. The gas distribution assembly provides for independent center to edge flow zonality, independent two precursor delivery, two precursor mixing via a mixing manifold, and recursive mass flow distribution in the gas distribution plate.

Gas distribution showerhead for semiconductor processing

Embodiments of the present disclosure provide a processing chamber with a top, a bottom, and a sidewall coupled together to define a volume, a gas distributor disposed around the sidewall, a substrate support disposed in the enclosure, the substrate support having a central exhaust opening having a channel and a rotary actuator disposed along a longitudinal axis thereof, and a plurality of substrate pockets distributed around the central exhaust opening, and an energy source coupled to the bottom.

Batch processing chamber

Embodiments of the present invention provide a liner assembly including an inject insert. The inject insert enables tenability of flow parameters, such as velocity, density, direction and spatial location, across a substrate being processed. The processing gas across the substrate being processed may be specially tailored for individual processes with a liner assembly according to embodiment of the present invention.

Inject insert for EPI chamber

Growing community of inventors

Mountain View, CA, United States of America

Mehmet Tugrul Samir