Anadigics, Inc.

Mehdi Frederick Soltan

Hamid Reza Rategh

Ali Kiaei

Ali Rajaei

A semiconductor device includes a semiconductor substrate, an electrode disposed on an upper surface of the substrate, and a set of one or more transistor element(s) disposed on the upper surface of the substrate. The set of transistor element(s) compactly surrounds the electrode with a threshold distance. In one embodiment, the set also compactly surrounds a via hole. In another, the element(s) comprises a bipolar junction transistor that has an aggregate emitter length of not less than 10 microns. In still another embodiment, the device is coupled to a RF circuit for power amplification.

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Stanford, CA, United States of America

Mehdi Frederick Soltan