Nitto-denko Corporation

Megumu Nagasawa

Masakazu Sugimoto

Yasushi Inoue

Kei Nakamura

Hideyuki Usui

Kazumasa Igarashi

Takuji Okeyui

Satoshi Tanigawa

Hisataka Ito

Nobuhiko Yoshio

Masao Abe

Shinya Ota

Kazuhiro Ikemura

Satoshi Ito

Tsutomu Nishioka

Masayuki Kaneto

Michio Komoto

Tadao Okawa

Hideto Kimura

Haruo Tabata

The invention provides a fuel cell which comprises a cathode and an anode arranged to sandwich a proton-conductive ion exchange electrolytic membrane, oxygen and hydrogen containing carbon monoxide being supplied to the cathode and the anode, respectively, in which the cathode comprises an electroconductive porous substrate which carries thereon platinum or a platinum alloy and a proton-conductive ion exchange electrolytic polymer, and the anode comprises an electroconductive porous substrate which carries thereon platinum or a platinum alloy and a proton-conductive ion exchange electrolytic polymer, and further at least the anode carries a proton-supplying material thereon.

Fuel cell

A circuit board for mounting a bare chip in the form of a flip chip. A metallic foil for protecting circuits in a state insulated therefrom is arranged in an area where the bare chip is located.

Circuit board for mounting bare chip

A double-sided circuit board of which a solder conductor is prevented from deformation in a cycling test so as to maintain high connection reliability, comprises an insulating layer made of an organic high molecular weight resin and a circuit provided on each side of the insulating layer the circuits on both sides being electrically connected through via-holes filled with a conductor made of solder having a metal powder dispersed therein.

Double-sided circuit board and multilayer wiring board comprising the same and process for producing double-sided circuit board

A plurality of double-sided circuit boards in which a circuit is provided on either side of an insulating layer comprising an organic high molecular resin with an alloy foil as a basic substance, and two circuits are electrically connected by a via with a soldered conductor a filled therein are laminated via an adhesive layer The adhesive layer has a bore opened at a predetermined position of a portion in direct contact with the circuits of two double-sided circuit boards A bore portion is provided with a soldered conductor The circuits of the two double-sided circuit boards are electrically connected by the soldered conductor

Multi-layer wiring board and method for manufacturing the same

A wafer-scale package structure in which a circuit board for rearranging electrode pads of a wafer is laminated on the wafer integrally. The circuit board can be divided into individual chip-size packages (CSPS) and which includes a layer of polyimide resin, and connection between the wafer and the circuit board is performed by solder bump, while the circuit board is stuck on the wafer with an adhesive.

Wafer-scale package structure and circuit board attached thereto

The present invention provides a mounted structure of circuit board which can be prepared by a simple method and exhibits a good heat dissipation from chip and undergoes relaxed heat stress and a multi-layer circuit board to be incorporated in the mounted structure. A novel mounted structure of circuit board is provided comprising a core material embedded in an insulating layer, said core material having a metal layer with a heat conductivity of not less than 100 W/m&middot;K provided on at least one side of an Ni&mdash;Fe alloy foil, said insulating layer comprising a wire conductor provided and a semiconductor element mounted on at least one side thereof, characterized in that a solder metal member for heat conduction is provided interposed between said semiconductor element and said core material so that said semiconductor element and said core material are connected to each other. The mounted structure of circuit board comprises a 6-layer circuit board,having a laminate of three sheets of double-sided circuit boards,and a chip,connected to a circuit,on the uppermost layer. The core material,embedded in the intraboard insulating layer,in various double-sided circuit board,comprises a copper layer,having a heat conductivity of 393 W/&middot;K provided on at least one side of an Ni&mdash;Fe alloy foil,The chip,and the underlying core material,are connected to each other with a solder metal member,The core material,on the horizontally adjacent double-sided circuit boards,are similarly connected to each other with the solder metal member

Mounted structure of circuit board and multi-layer circuit board therefor

A low-thermal expansion circuit board comprising an insulating layer made of an organic polymer having thereon a wiring conductor for bare chip mounting, wherein the wiring conductor is an iron-nickel-based alloy layer having a copper layer on at least one side thereof; and a low-thermal expansion multilayer circuit board having a plurality of the low-thermal expansion circuit boards via an adhesive layer, the adhesive layer having through-holes filled with solder to connect the circuits layers.

Low-thermal expansion circuit board and multilayer circuit board

A semiconductor device in which the space between a semiconductor chip and an auxiliary wiring plate is sealed with resin. The auxiliary wiring plate has insulating layers and on both sides of the routing conductor, the insulating layer on the side of the semiconductor chip has a hole being led from the routing conductor to the electrode of the semiconductor chip, the metal filled in the hole and the metal bump formed so as to protrude from the hole serves as an inner electrode. The semiconductor device can be manufactured by the TAB technique.

Chip scale package type of semiconductor device

A semiconductor device capable of preventing the occurrence of defect of electroconductivity, wherein a semiconductor chip 1 equipped with electrodes 11 is mounted on an auxiliary wiring plate 2 in the state of facing the surface of the electrode 11 side, leading conductors 23 are disposed in the inside of the auxiliary wiring plate 2, one end of each leading conductor 23 forms an internal electrode 21 projecting from the surface of the auxiliary wiring plate 2 at the side of mounting the semiconductor chip 1, the other end of the leading conductor 23 forms an external electrode 22 projecting from the surface of the auxiliary wiring plate opposite to the side of mounting the semiconductor chip 1, and each of the internal electrodes 21 is connected to each of the electrodes 11 of the semiconductor chip 1, at least a gap between the semiconductor chip 1 and the auxiliary wiring plate 2 is encapsulated with a heat-welding polyimide resin layer.

Semiconductor device, production method thereof, and tape carrier for

A semiconductor device in which a semiconductor chip is encapsulated in an epoxy resin composition comprising (A) an epoxy resin represented by formula (I): ##STR1## wherein R.sub.1, R.sub.2, R.sub.3, and R.sub.4 each represents an alkyl group having from 1 to 4 carbon atoms, and (B) a reaction product obtained by preliminarily reacting a silane compound represented by formula (II): ##STR2## wherein X represents a monovalent organic group having at least one functional group selected from the group consisting of a glycidyl group, an amino group, and a mercapto group; Y represents an alkoxy group having from 1 to 4 carbon atoms; and n represents 0, 1 or 2, with a phenol aralkyl resin represented by formula (III) ##STR3## wherein m represents 0 or a positive integer. The epoxy resin composition has low moisture absorption and low stress to provide a semiconductor device excellent in thermal crack resistance and moisture resistance.

Growing community of inventors

Osaka, Japan

Megumu Nagasawa