Kabushiki Kaisha Toshiba

Megumi Yamamura

Toshihide Shimmei

Tetsuya Kaji

Masaki Adachi

A method of fabricating semiconductor device is described. There is provided a method of fabricating a semiconductor device including, sticking a first protective tape on a first surface of a semiconductor substrate, polishing a second surface of the semiconductor substrate faced to the first surface, sticking a second protective tape on the second surface of the semiconductor substrate, removing the first protective tape, dicing the semiconductor substrate from the first surface side to separate the semiconductor substrate to a plurality of semiconductor chips, sticking a third protective tape on the first surface of a plurality of the semiconductor chips, removing the second protective tape, and etching a cutting surface of the semiconductor chip and the second surface of the semiconductor chip by dry etching.

Method of fabricating semiconductor device

There is provided a semiconductor device including, a bed, a brazing filler metal formed on a first surface of the bed, a barrier metal film formed on a first surface of the brazing filler metal, a alloy film formed on a first surface of the barrier metal film, a semiconductor chip disposed on a first surface of the alloy film, a bonding wire electrically connecting between a terminal formed on a first surface of the semiconductor chip and a lead terminal, and a mold resin molding the bed, the brazing filler metal, the barrier metal film, the alloy film, the semiconductor chip and the bonding wire.

Semiconductor device and method of manufacturing a semiconductor device

A composition for sealing a semiconductor device contains polyphenylene sulfide wherein a line expansion coefficient at 150&deg; C. to 200&deg; C. is 4.75&times;10,&lsqb;1/&deg;C.&rsqb; or less, a line thermal expansion coefficient at 80 to 130&deg; C. is 6.0&times;10,&lsqb;1/&deg;C.&rsqb; or less, and a line expansion coefficient ratio between the flow direction and a normal direction of the flow direction is 0.55 or more.

Growing community of inventors

Hyogo-ken, Japan

Megumi Yamamura