Renesas Electronics Corporation

Hitachi, Ltd.

Renesas Technology Corp.

Megumi Kawakami

Shuji Ikeda

Isao Yoshida

Yutaka Hoshino

Masatoshi Morikawa

Shiro Kamohara

Tomoyuki Miyake

In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs(P) for leading out electrodes on a source region, a drain regionand leach-through layers(), to which a first layer wirings(M) are connected and, further, backing second layer wiringstoare connected on the conductor plugs(P) to the first layer wirings(M).

Semiconductor device including a power MISFET

Semiconductor device including a power MISFET and method of manufacturing the same

Semiconductor device having a plurality of misfets formed on a main surface of a semiconductor substrate

In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs(P) for leading out electrodes on a source regiona drain regionand leach-through layers(), to which a first layer wirings(M) are connected and, further, backing second layer wiringstoare connected on the conductor plugs(P) to the first layer wirings(M).

Power mosfet having conductor plug structured contacts

In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs (P ) for leading out electrodes on a source region , a drain region and leach-through layers ( ), to which a first layer wirings (M ) are connected and, further, backing second layer wirings to are connected on the conductor plugs (P ) to the first layer wirings (M ).

Semiconductor device and method of manufacturing the same

In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs (P ) for leading out electrodes on a source region a drain region and leach-through layers ( ), to which a first layer wirings (M ) are connected and, further, backing second layer wirings to are connected on the conductor plugs (P ) to the first layer wirings (M ).

Semiconductor device and a method of manufacturing the same

Growing community of inventors

Kokubunji, Japan

Megumi Kawakami