Kabushiki Kaisha Toshiba

Kioxia Corporation

Toshiba Memory Corporation

Megumi Ishiduki

Ryota Katsumata

Masaru Kidoh

Masaru Kito

Yoshiaki Fukuzumi

Hiroyasu Tanaka

Hideaki Aochi

Yosuke Komori

Tomoko Fujiwara

Ryouhei Kirisawa

Junya Matsunami

Yoshimasa Mikajiri

Shigeto Oota

Tadashi Iguchi

Murato Kawai

Hisashi Kato

Mitsuru Sato

Yasuyuki Matsuoka

Takuya Inatsuka

Hiroshi Nakaki

Takamasa Ito

Toru Matsuda

Akihiro Nitayama

Hitoshi Ito

Tomo Ohsawa

Yoshihisa Iwata

Yoichi Minemura

Tomoo Hishida

Yoshihiro Yanai

Yoshihiro Akutsu

Takuji Kuniya

Gaku Sudo

Takuya Mizutani

Atsushi Konno

Masanobu Baba

Soichirou Kitazaki

A semiconductor storage device includes a stacked body in which conductive and insulating layers are alternately stacked in a first direction, conductive lines extending along a second direction intersecting the first direction and arranged along a third direction intersecting the first and second directions, insulators extending along the first and third directions in the body, arranged along the second direction, and dividing conductive layers, columnar bodies extending along the first direction and arranged along the second direction between insulators, each columnar body including a semiconductor body forming memory cells, and vias each connected between a conductive line and a corresponding columnar body. The conductive lines include first through fourth lines, and the columnar bodies include first through fourth bodies, arranged in this order. When viewed from the first direction, the first through fourth columnar bodies respectively overlap and are electrically connected to the first, third, second, and fourth lines.

Semiconductor storage device

A semiconductor device includes a base body, a stacked body on the base body and a first columnar part. The base body includes a substrate, a first insulating film on the substrate, a first conductive film on the first insulating film, and a first semiconductor part on the first conductive film. The stacked body includes conductive layers and insulating layers stacked alternately in a stacking direction. The first columnar part is provided inside the stacked body and the first semiconductor part. The first columnar part includes a semiconductor body and a memory film between the semiconductor body and conductive layers. The semiconductor body extends in the stacking direction. The first columnar part has a first diameter and a second diameter in a first direction crossing the stacking direction. The first diameter inside the first semiconductor part is larger than the second diameter inside the stacked body.

Nonvolatile semiconductor memory device including a memory cell

A nonvolatile semiconductor memory device, includes: a stacked structural unit including a plurality of insulating films alternately stacked with a plurality of electrode films in a first direction; a selection gate electrode stacked on the stacked structural unit in the first direction; an insulating layer stacked on the selection gate electrode in the first direction; a first semiconductor pillar piercing the stacked structural unit, the selection gate electrode, and the insulating layer in the first direction, a first cross section of the first semiconductor pillar having an annular configuration, the first cross section being cut in a plane orthogonal to the first direction; a first core unit buried in an inner side of the first semiconductor pillar, the first core unit being recessed from an upper face of the insulating layer; and a first conducting layer of the first semiconductor pillar provided on the first core unit to contact the first core unit.

Nonvolatile semiconductor memory device and method for manufacturing same

According to one embodiment, a semiconductor device includes a stacked body in which a plurality of conductive layers including upper conductive layers and lower conductive layers are stacked to be apart from each other in a first direction, and which includes a stairs-shaped end portion, the upper conductive layers functioning as select gate lines for a NAND string, and the lower conductive layers functioning as word lines for the NAND string, a plurality of pillar structures each including a semiconductor layer extending in the first direction through the stacked body, and a first contact connected to two or more first upper conductive layers stacked successively, and provided to extend over upper surfaces of the two or more first upper conductive layers.

Semiconductor device

According to one embodiment, a nonvolatile semiconductor memory device includes a substrate, a stacked body, a semiconductor pillar, a charge storage film, and a drive circuit. The stacked body is provided on the substrate. The stacked body includes a plurality of insulating films alternately stacked with a plurality of electrode films. A through-hole is made in the stacked body to align in a stacking direction. The semiconductor pillar is buried in an interior of the through-hole. The charge storage film is provided between the electrode film and the semiconductor pillar. The drive circuit supplies a potential to the electrode film. The diameter of the through-hole differs by a position in the stacking direction. The drive circuit supplies a potential to reduce a potential difference with the semiconductor pillar as a diameter of the through-hole piercing the electrode film decreases.

Nonvolatile semiconductor memory device and method for driving same

A method of producing a semiconductor memory device includes, when three directions crossing each other are set to first, second, and third directions, respectively, laminating a plurality of first laminates and a plurality of second laminates on a semiconductor substrate in the third direction. The method further includes forming ends of the plurality of first laminates in shapes of steps extending in the first direction, and forming ends of the plurality of second laminates in shapes of steps extending in both directions of the first direction and the second direction.

Semiconductor memory device and production method thereof

According to one embodiment, a semiconductor memory device includes a stacked layer body including conductive layers stacked to be apart from each other in a first direction, and including a stair-like end with rising parts and terrace parts, wherein successive first conductive layers including an uppermost conductive layer function as select gate lines for a NAND string, and a first contact connected to the uppermost conductive layer provided to correspond to a first rising part which is an uppermost one of the rising parts. The first contact passes through the uppermost conductive layer to be further connected to a first conductive layer adjacent to the uppermost conductive layer.

Semiconductor memory device

According to one embodiment, a semiconductor memory device includes a first conductive layer, a first semiconductor body, a second semiconductor body, a first memory layer, and a second memory layer. The first conductive layer includes first to fourth extension regions, and a first connection region. The first extension region extends in a first direction. The second extension region extends in the first direction and is arranged with the first extension region in the first direction. The third extension region extends in the first direction and is arranged with the first extension region in a second direction crossing the first direction. The fourth extension region extends in the first direction, is arranged with the third extension region in the first direction, and is arranged with the second extension region in the second direction.

A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to a substrate and a coupling portion formed to couple the lower ends of the pair of columnar portions; a charge storage layer formed to surround the side surfaces of the columnar portions; and first conductive layers formed to surround the side surfaces of the columnar portions and the charge storage layer. The first conductive layers function as gate electrodes of the memory cells.

Non-volatile semiconductor storage device and method of manufacturing the same

A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are connected in series. Each of the memory strings includes first semiconductor layers each having a pair of columnar portions extending in a vertical direction with respect to a substrate and a coupling portion formed to couple the lower ends of the pair of columnar portions a charge storage layer formed to surround the side surfaces of the columnar portions: and first conductive layers formed to surround the side surfaces of the columnar portions and the charge storage layer. The first conductive layers function as gate electrodes of the memory cells.

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Yokohama, Japan

Megumi Ishiduki