Hitachi-High-Technologies Corporation

Hitachi, Ltd.

Megumi Aizawa

Yuichi Madokoro

Yukio Yoshizawa

Satoshi Tomimatsu

Tohru Ishitani

Tsuyoshi Ohnishi

Isamu Sekihara

Tsuyoshi Onishi

Kunio Sakamoto

Hiroji Iwata

Observation using an FIB image is enabled without causing any damage to a designated region. To this end, an ion beam scanning-prohibited region is set in a sample by using an image acquired by a charged particle beam other than an ion beam, or an image prepared as external data as a peripheral image including the designated region of a sample. Thereafter, the image used to set the ion beam scanning-prohibited region is exactly superimposed on an FIB image acquired for regions except the ion beam scanning-prohibited region, thereby forming an image including the ion beam scanning-prohibited region on which ion beam scanning has not been performed.

Charged particle beam device, position specification method used for charged particle beam device, and program

Separation and the like of an excised specimen from a specimen are automatically performed. Marks for improving image recognition accuracy are provided in a region that becomes an excised specimen in a specimen and a region other than said region, or in a transfer means for transferring the excised specimen and a specimen holder capable of holding the excised specimen, and the relative movement of the excised specimen and the specimen, and the like are recognized with high accuracy by image recognition. In the sampling of a minute specimen using a focused ion beam, the detection of an end point of processing for separation of the excised specimen from the specimen, and the like are automatically performed. Thus, for example, unmanned specimen excision becomes possible, and preparation of a lot of specimens becomes possible.

Specimen preparation device, and control method in specimen preparation device

An object of the present invention is to eliminate a distortion in an image even if there is an angular difference between the deflection direction of the charged particle beam and the tilt axis of a specimen, and to accurately observe and process the specimen. When the deflection direction of the charged particle beam is not parallel to the tilt axis of the specimen, the deflection rotation angle to the observation direction of the charged particle beam is determined, and the deflection pattern is changed. Thereby the distortion in the image is corrected. The deflection pattern is changed to a parallelogram. A distortion-free image is obtained even if the specimen is tilted, and the specimen can be observed and processed with high accuracy. This allows automatically recognizing the position correction mark to perform observation and processing after correcting the positional relation.

Charged particle beam device and method for correcting position with respect to charged particle beam

When SIM image data D&lsqb;n&rsqb; of a mark is compared with reference SIM image data in calculating a displacement of machining position in the nth time, image data D&lsqb;n&minus;1&rsqb; just before the nth time is employed as the reference image data and a position displacement of the image is obtained from matching processing of the two kinds of image data of D&lsqb;n&rsqb; and D&lsqb;n&minus;1&rsqb; to calculate a displacement of machining position.

Focused ion beam machining method and focused ion beam machining apparatus

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Hitachi, Japan

Megumi Aizawa