Applied Materials, Inc.

Meenakshi Gupta

Karthik Janakiraman

Rui Cheng

Zubin Huang

Diwakar N Kedlaya

Srinivas Guggilla

Gene S Lee

Yung-chen Lin

Hidetaka Oshio

Chao Li

Tzu-shun Yang

The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a first mandrel layer on a material layer disposed on a substrate. A first spacer layer is conformally formed on sidewalls of the first mandrel layer, wherein the first spacer layer comprises a doped silicon material. The first mandrel layer is selectively removed while keeping the first spacer layer. A second spacer layer is conformally formed on sidewalls of the first spacer layer and selectively removing the first spacer layer while keeping the second spacer layer.

Multiple spacer patterning schemes

Embodiments for processing a substrate are provided and include a method of trimming photoresist to provide photoresist profiles with smooth sidewall surfaces and to tune critical dimensions (CD) for the patterned features and/or a subsequently deposited dielectric layer. The method can include depositing a sacrificial structure layer on the substrate, depositing a photoresist on the sacrificial structure layer, and patterning the photoresist to produce a crude photoresist profile on the sacrificial structure layer. The method also includes trimming the photoresist with a plasma to produce a refined photoresist profile covering a first portion of the sacrificial structure layer while a second portion of the sacrificial structure layer is exposed, etching the second portion of the sacrificial structure layer to form patterned features disposed on the substrate, and depositing a dielectric layer on the patterned features.

Methods for modifying photoresist profiles and tuning critical dimensions

The present disclosure provides forming nanostructures utilizing multiple patterning process with good profile control and feature transfer integrity. In one embodiment, a method for forming features on a substrate includes forming a mandrel layer on a substrate, conformally forming a spacer layer on the mandrel layer, wherein the spacer layer is a doped silicon material, and patterning the spacer layer. In another embodiment, a method for forming features on a substrate includes conformally forming a spacer layer on a mandrel layer on a substrate, wherein the spacer layer is a doped silicon material, selectively removing a portion of the spacer layer using a first gas mixture, and selectively removing the mandrel layer using a second gas mixture different from the first gas mixture.

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San Jose, CA, United States of America

Meenakshi Gupta