Cypress Semiconductor Corporation

Spansion Llc.

Mee-Choo Ong

Wei-Kent Ong

Sheau-Yang Ch'ng

Kian-Huat Hoo

Jih Hong Beh

Ogiwara Yuusuke

Boon-Weng Teoh

Sie-Wei Henry Lau

Sie Wei Henry Lau

Disclosed herein are system, apparatus, article of manufacture, method and/or computer program product embodiments for improving a read margin in non-volatile semiconductor memory device. An embodiment includes measuring an erase-time of a memory block in a memory device and associating an indicator from the plurality of indicators for the memory block. The indicator is saved and later retrieved during a read operation.

Memory access bases on erase cycle time

Disclosed herein are system, method and/or computer program product embodiments for automatically resuming an irregular erasure stoppage in a sector of a memory system. An embodiment includes storing information related to any completed sub-stage of a multi stage erasure process and the corresponding memory sector address in a dedicated memory. After an irregular erasure stoppage occurs, an embodiment reads the information from the dedicated memory and resumes the erasure process of the memory sector from the last sub-stage completed.

Auto resume of irregular erase stoppage of a memory sector

A memory operate in a normal mode of operation or a testing mode of operation. In the testing mode of operation, the memory can measure various benchmarks of performance, such as read speed. The memory can perform an asynchronous read operation to read a word of electronic data that corresponds to an address or a page read operation in which multiple asynchronous read operations are performed to read multiple words of electronic data, also referred to as a page of electronic data, that correspond to multiple addresses. The memory can measure a time required, referred to as read speed, to read the word of electronic data or the multiple words of electronic data from the memory. In the normal mode of operation, the memory can perform the asynchronous read operation, the page read operation, an asynchronous write operation in which a word of electronic data is stored into the memory that correspond to the address, or a page write operation in which a page electronic data is stored into the memory that correspond to the multiple addresses.

For test (DFT) read speed through transition detector in built-in self-test (BIST) sort

A method, system and apparatus for determining whether any un-programmed cell is affected by charge disturb by comparing the voltage threshold of the un-programmed cells against a reference voltage. If the voltage threshold for the un-programmed cell exceeds the reference voltage, the failed or defective un-programmed cell will be then be programmed. This will change the defective un-programmed cell to a new programmed value. To account for the location of the failing memory cell, address syndrome bits are used to identify the location of the defective memory cell.

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Penang, Malaysia

Mee-Choo Ong