University-Industry Cooperation Group of Kyung Hee University

Md Mobaidul Islam

Jin Yong Jang

Ravindra Naik Bukke

The present disclosure discloses an oxide semiconductor thin-film transistor and a method of fabricating the same. According to one embodiment of the present disclosure, the oxide semiconductor thin-film transistor includes a substrate, a gate electrode, a gate insulating layer, an oxide semiconductor layer, and source and drain electrodes. Since the gate insulating layer is formed of at least one of zirconium oxide (ZrOx) and lanthanum zirconium oxide (LaZrOx), the electrical characteristics of the oxide semiconductor thin-film transistor may be controlled by the gate insulating layer.

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Seoul, South Korea

Md Mobaidul Islam